Monolithic Integration of Al2O3 and Si3N4 Toward Double-Layer Active-Passive Platform

Jinfeng Mu*, Meindert DIjkstra, Yean Sheng Yong, Michiel De Goede, Lantian Chang, Sonia M. García-Blanco

*Corresponding author for this work

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Abstract

Low-cost, high-performance integration technologies are instrumental for active-passive integrated photonics devices. The monolithic integration of Al2O3 and Si3N4 is studied, enabling to combine the promising optical features of Si3N4 with the excellent optical gain characteristics of rare-earth-ion doped Al2O3. The Al2O3 and Si3N4 layers are separated by a thin SiO2 film and coupled by adiabatically width-tapered Al2O3 and thickness-tapered Si3N4 waveguides. In this paper, a detailed characterization of the couplers, as well as a study of the influence of the different design parameters and fabrication tolerances on the final device performance is presented. Test structures are characterized under transverse electric (TE) polarization. Measured loss per coupler is as low as 0.26 ± 0.03 dB at the wavelength of 1030 nm, and below 0.24 dB in the spectral window of 1460-1635 nm. Lateral misalignment of ±1 μm results in less than 0.6 dB increase of the coupler loss at 1030 nm, and the tolerance of misalignment goes up to 1.7 μm at the investigated longest wavelength of 1635 nm without introducing extra coupler losses. The reported integration technology paves the way toward a double-layer platform monolithically integrating Si3N4 and rare-earth-ion doped Al2O3 for active-passive photonic functionalities.

Original languageEnglish
Article number8681108
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Issue number5
Early online date3 Apr 2019
DOIs
Publication statusPublished - 1 Sep 2019

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Keywords

  • adiabatic taper
  • aluminum oxide
  • double-layer
  • Monolithic integration
  • optical coupling
  • silicon nitride
  • vertical taper

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