Abstract
Low-cost, high-performance integration technologies are instrumental for active-passive integrated photonics devices. The monolithic integration of Al2O3 and Si3N4 is studied, enabling to combine the promising optical features of Si3N4 with the excellent optical gain characteristics of rare-earth-ion doped Al2O3. The Al2O3 and Si3N4 layers are separated by a thin SiO2 film and coupled by adiabatically width-tapered Al2O3 and thickness-tapered Si3N4 waveguides. In this paper, a detailed characterization of the couplers, as well as a study of the influence of the different design parameters and fabrication tolerances on the final device performance is presented. Test structures are characterized under transverse electric (TE) polarization. Measured loss per coupler is as low as 0.26 ± 0.03 dB at the wavelength of 1030 nm, and below 0.24 dB in the spectral window of 1460-1635 nm. Lateral misalignment of ±1 μm results in less than 0.6 dB increase of the coupler loss at 1030 nm, and the tolerance of misalignment goes up to 1.7 μm at the investigated longest wavelength of 1635 nm without introducing extra coupler losses. The reported integration technology paves the way toward a double-layer platform monolithically integrating Si3N4 and rare-earth-ion doped Al2O3 for active-passive photonic functionalities.
| Original language | English |
|---|---|
| Article number | 8681108 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 25 |
| Issue number | 5 |
| Early online date | 3 Apr 2019 |
| DOIs | |
| Publication status | Published - 1 Sep 2019 |
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Keywords
- adiabatic taper
- aluminum oxide
- double-layer
- Monolithic integration
- optical coupling
- silicon nitride
- vertical taper
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Monolithic Integration of Al2O3 and Si3N4 Toward Double-Layer Active-Passive Platform. / Mu, Jinfeng; DIjkstra, Meindert; Yong, Yean Sheng; De Goede, Michiel; Chang, Lantian; García-Blanco, Sonia M.
In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, No. 5, 8681108, 01.09.2019.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Monolithic Integration of Al2O3 and Si3N4 Toward Double-Layer Active-Passive Platform
AU - Mu, Jinfeng
AU - DIjkstra, Meindert
AU - Yong, Yean Sheng
AU - De Goede, Michiel
AU - Chang, Lantian
AU - García-Blanco, Sonia M.
PY - 2019/9/1
Y1 - 2019/9/1
N2 - Low-cost, high-performance integration technologies are instrumental for active-passive integrated photonics devices. The monolithic integration of Al2O3 and Si3N4 is studied, enabling to combine the promising optical features of Si3N4 with the excellent optical gain characteristics of rare-earth-ion doped Al2O3. The Al2O3 and Si3N4 layers are separated by a thin SiO2 film and coupled by adiabatically width-tapered Al2O3 and thickness-tapered Si3N4 waveguides. In this paper, a detailed characterization of the couplers, as well as a study of the influence of the different design parameters and fabrication tolerances on the final device performance is presented. Test structures are characterized under transverse electric (TE) polarization. Measured loss per coupler is as low as 0.26 ± 0.03 dB at the wavelength of 1030 nm, and below 0.24 dB in the spectral window of 1460-1635 nm. Lateral misalignment of ±1 μm results in less than 0.6 dB increase of the coupler loss at 1030 nm, and the tolerance of misalignment goes up to 1.7 μm at the investigated longest wavelength of 1635 nm without introducing extra coupler losses. The reported integration technology paves the way toward a double-layer platform monolithically integrating Si3N4 and rare-earth-ion doped Al2O3 for active-passive photonic functionalities.
AB - Low-cost, high-performance integration technologies are instrumental for active-passive integrated photonics devices. The monolithic integration of Al2O3 and Si3N4 is studied, enabling to combine the promising optical features of Si3N4 with the excellent optical gain characteristics of rare-earth-ion doped Al2O3. The Al2O3 and Si3N4 layers are separated by a thin SiO2 film and coupled by adiabatically width-tapered Al2O3 and thickness-tapered Si3N4 waveguides. In this paper, a detailed characterization of the couplers, as well as a study of the influence of the different design parameters and fabrication tolerances on the final device performance is presented. Test structures are characterized under transverse electric (TE) polarization. Measured loss per coupler is as low as 0.26 ± 0.03 dB at the wavelength of 1030 nm, and below 0.24 dB in the spectral window of 1460-1635 nm. Lateral misalignment of ±1 μm results in less than 0.6 dB increase of the coupler loss at 1030 nm, and the tolerance of misalignment goes up to 1.7 μm at the investigated longest wavelength of 1635 nm without introducing extra coupler losses. The reported integration technology paves the way toward a double-layer platform monolithically integrating Si3N4 and rare-earth-ion doped Al2O3 for active-passive photonic functionalities.
KW - adiabatic taper
KW - aluminum oxide
KW - double-layer
KW - Monolithic integration
KW - optical coupling
KW - silicon nitride
KW - vertical taper
UR - http://www.scopus.com/inward/record.url?scp=85067358378&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2019.2908559
DO - 10.1109/JSTQE.2019.2908559
M3 - Article
VL - 25
JO - Science and engineering of composite materials
JF - Science and engineering of composite materials
SN - 0792-1233
IS - 5
M1 - 8681108
ER -