Monolithic integration of Al2O3:Er3+amplifiers in Si3N4 technology

Jinfeng Mu; Meindert Dijkstra; Sonia M. Garcia-Blanco

doi:10.1109/CLEOE-EQEC.2019.8873164

Monolithic integration of Al₂O₃:Er³⁺amplifiers in Si₃N₄ technology

Jinfeng Mu, Meindert Dijkstra, Sonia M. Garcia-Blanco

Optical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

3 Downloads (Pure)

Abstract

Si₃N₄ platforms have promising features including low waveguide loss (<0.1 dB/cm), wide transparency window (0.4-2.35 μm), and compatibility with CMOS technology [1]. Low-cost and high-performance integration technologies are instrumental for providing active functionalities to the Si₃N₄ platform. Lasers on Si₃N₄ platforms have been realized using hybrid integration of InP [1] and monolithic integration of rare-earth-ion doped Al₂O₃ materials [2]. To independently guide the modes in monolithically integrated Al₂O₃ and Si₃N₄ waveguides, a double-layer platform has been studied in our previous work [3]. This enables to achieve high mode confinement and field intensity in the Al₂O₃ waveguide core, which is beneficial for reducing pump power threshold to obtain net gain of amplifiers. In this paper, we experimentally demonstrate the Al₂O₃:Er³⁺-Si₃N₄ optical amplifiers based on the double-layer monolithic integration. On-chip net gain of ∼10 dB is obtained for a 5.9 cm long fully integrated amplifier at the signal wavelength of 1532 nm under pumping at 976.2 nm.

Original language	English
Title of host publication	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	978-1-7281-0469-0
ISBN (Print)	978-1-7281-0470-6
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2019.8873164
Publication status	Published - 17 Oct 2019
Event	Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich Trade Fair Centre, Munich, Germany Duration: 23 Jun 2019 → 27 Jun 2019 http://www.cleoeurope.org

Conference

Conference	Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Abbreviated title	CLEO/Europe-EQEC 2019
Country/Territory	Germany
City	Munich
Period	23/06/19 → 27/06/19
Internet address	http://www.cleoeurope.org

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10.1109/CLEOE-EQEC.2019.8873164

Cite this

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title = "Monolithic integration of Al2O3:Er3+amplifiers in Si3N4 technology",

abstract = "Si3N4 platforms have promising features including low waveguide loss (<0.1 dB/cm), wide transparency window (0.4-2.35 μm), and compatibility with CMOS technology [1]. Low-cost and high-performance integration technologies are instrumental for providing active functionalities to the Si3N4 platform. Lasers on Si3N4 platforms have been realized using hybrid integration of InP [1] and monolithic integration of rare-earth-ion doped Al2O3 materials [2]. To independently guide the modes in monolithically integrated Al2O3 and Si3N4 waveguides, a double-layer platform has been studied in our previous work [3]. This enables to achieve high mode confinement and field intensity in the Al2O3 waveguide core, which is beneficial for reducing pump power threshold to obtain net gain of amplifiers. In this paper, we experimentally demonstrate the Al2O3:Er3+-Si3N4 optical amplifiers based on the double-layer monolithic integration. On-chip net gain of ∼10 dB is obtained for a 5.9 cm long fully integrated amplifier at the signal wavelength of 1532 nm under pumping at 976.2 nm.",

author = "Jinfeng Mu and Meindert Dijkstra and Garcia-Blanco, {Sonia M.}",

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note = "Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, CLEO/Europe-EQEC 2019 ; Conference date: 23-06-2019 Through 27-06-2019",

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Mu, J, Dijkstra, M & Garcia-Blanco, SM 2019, Monolithic integration of Al₂O₃:Er³⁺amplifiers in Si₃N₄ technology. in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019., 8873164, IEEE, Piscataway, NJ, Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, Munich, Bavaria, Germany, 23/06/19. https://doi.org/10.1109/CLEOE-EQEC.2019.8873164

Monolithic integration of Al₂O₃:Er³⁺amplifiers in Si₃N₄ technology. / Mu, Jinfeng; Dijkstra, Meindert ; Garcia-Blanco, Sonia M.
2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Piscataway, NJ: IEEE, 2019. 8873164.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Garcia-Blanco, Sonia M.

PY - 2019/10/17

Y1 - 2019/10/17

N2 - Si3N4 platforms have promising features including low waveguide loss (<0.1 dB/cm), wide transparency window (0.4-2.35 μm), and compatibility with CMOS technology [1]. Low-cost and high-performance integration technologies are instrumental for providing active functionalities to the Si3N4 platform. Lasers on Si3N4 platforms have been realized using hybrid integration of InP [1] and monolithic integration of rare-earth-ion doped Al2O3 materials [2]. To independently guide the modes in monolithically integrated Al2O3 and Si3N4 waveguides, a double-layer platform has been studied in our previous work [3]. This enables to achieve high mode confinement and field intensity in the Al2O3 waveguide core, which is beneficial for reducing pump power threshold to obtain net gain of amplifiers. In this paper, we experimentally demonstrate the Al2O3:Er3+-Si3N4 optical amplifiers based on the double-layer monolithic integration. On-chip net gain of ∼10 dB is obtained for a 5.9 cm long fully integrated amplifier at the signal wavelength of 1532 nm under pumping at 976.2 nm.

AB - Si3N4 platforms have promising features including low waveguide loss (<0.1 dB/cm), wide transparency window (0.4-2.35 μm), and compatibility with CMOS technology [1]. Low-cost and high-performance integration technologies are instrumental for providing active functionalities to the Si3N4 platform. Lasers on Si3N4 platforms have been realized using hybrid integration of InP [1] and monolithic integration of rare-earth-ion doped Al2O3 materials [2]. To independently guide the modes in monolithically integrated Al2O3 and Si3N4 waveguides, a double-layer platform has been studied in our previous work [3]. This enables to achieve high mode confinement and field intensity in the Al2O3 waveguide core, which is beneficial for reducing pump power threshold to obtain net gain of amplifiers. In this paper, we experimentally demonstrate the Al2O3:Er3+-Si3N4 optical amplifiers based on the double-layer monolithic integration. On-chip net gain of ∼10 dB is obtained for a 5.9 cm long fully integrated amplifier at the signal wavelength of 1532 nm under pumping at 976.2 nm.

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M3 - Conference contribution

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BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

PB - IEEE

CY - Piscataway, NJ

T2 - Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Y2 - 23 June 2019 through 27 June 2019

ER -

Monolithic integration of Al₂O₃:Er³⁺amplifiers in Si₃N₄ technology

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