Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Laura Agazzi, Jonathan D.B. Bradley, Mindert Dijkstra, Feridun Ay, Gunther Roelkens, Roel Baets, Kerstin Wörhoff, Markus Pollnau

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    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
    Original languageEnglish
    Pages (from-to)27703-27711
    Number of pages9
    JournalOptics express
    Issue number26
    Publication statusPublished - 20 Dec 2010


    • EC Grant Agreement nr.: FP6/017501
    • Lasers and laser optics
    • Optical Amplifiers
    • Integrated Optics
    • IOMS-APD: Active Photonic Devices
    • Integrated optics materials


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