Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
- EC Grant Agreement nr.: FP6/017501
- Lasers and laser optics
- Optical Amplifiers
- Integrated Optics
- IOMS-APD: Active Photonic Devices
- Integrated optics materials