Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Laura Agazzi, Jonathan D.B. Bradley, Mindert Dijkstra, Feridun Ay, Gunther Roelkens, Roel Baets, Kerstin Wörhoff, Markus Pollnau

    Research output: Contribution to journalArticleAcademicpeer-review

    64 Citations (Scopus)
    46 Downloads (Pure)

    Abstract

    Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
    Original languageEnglish
    Pages (from-to)27703-27711
    Number of pages9
    JournalOptics express
    Volume18
    Issue number26
    DOIs
    Publication statusPublished - 20 Dec 2010

    Fingerprint

    erbium
    amplifiers
    insulators
    waveguides
    silicon
    sputtering
    chips
    etching
    wafers
    photonics
    fabrication
    augmentation
    wavelengths
    lasers
    ions

    Keywords

    • EC Grant Agreement nr.: FP6/017501
    • Lasers and laser optics
    • Optical Amplifiers
    • Integrated Optics
    • IOMS-APD: Active Photonic Devices
    • Integrated optics materials

    Cite this

    Agazzi, L., Bradley, J. D. B., Dijkstra, M., Ay, F., Roelkens, G., Baets, R., ... Pollnau, M. (2010). Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides. Optics express, 18(26), 27703-27711. https://doi.org/10.1364/OE.18.027703
    Agazzi, Laura ; Bradley, Jonathan D.B. ; Dijkstra, Mindert ; Ay, Feridun ; Roelkens, Gunther ; Baets, Roel ; Wörhoff, Kerstin ; Pollnau, Markus. / Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides. In: Optics express. 2010 ; Vol. 18, No. 26. pp. 27703-27711.
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    abstract = "Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.",
    keywords = "EC Grant Agreement nr.: FP6/017501, Lasers and laser optics, Optical Amplifiers, Integrated Optics, IOMS-APD: Active Photonic Devices, Integrated optics materials",
    author = "Laura Agazzi and Bradley, {Jonathan D.B.} and Mindert Dijkstra and Feridun Ay and Gunther Roelkens and Roel Baets and Kerstin W{\"o}rhoff and Markus Pollnau",
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    Agazzi, L, Bradley, JDB, Dijkstra, M, Ay, F, Roelkens, G, Baets, R, Wörhoff, K & Pollnau, M 2010, 'Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides', Optics express, vol. 18, no. 26, pp. 27703-27711. https://doi.org/10.1364/OE.18.027703

    Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides. / Agazzi, Laura; Bradley, Jonathan D.B.; Dijkstra, Mindert; Ay, Feridun; Roelkens, Gunther; Baets, Roel; Wörhoff, Kerstin; Pollnau, Markus.

    In: Optics express, Vol. 18, No. 26, 20.12.2010, p. 27703-27711.

    Research output: Contribution to journalArticleAcademicpeer-review

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    AU - Agazzi, Laura

    AU - Bradley, Jonathan D.B.

    AU - Dijkstra, Mindert

    AU - Ay, Feridun

    AU - Roelkens, Gunther

    AU - Baets, Roel

    AU - Wörhoff, Kerstin

    AU - Pollnau, Markus

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    PY - 2010/12/20

    Y1 - 2010/12/20

    N2 - Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

    AB - Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

    KW - EC Grant Agreement nr.: FP6/017501

    KW - Lasers and laser optics

    KW - Optical Amplifiers

    KW - Integrated Optics

    KW - IOMS-APD: Active Photonic Devices

    KW - Integrated optics materials

    U2 - 10.1364/OE.18.027703

    DO - 10.1364/OE.18.027703

    M3 - Article

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    JF - Optics express

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    ER -