Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Laura Agazzi; Jonathan D.B. Bradley; Mindert Dijkstra; Feridun Ay; Gunther Roelkens; Roel Baets; Kerstin Wörhoff; Markus Pollnau

doi:10.1364/OE.18.027703

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Laura Agazzi
, Jonathan D.B. Bradley
, Mindert Dijkstra
, Feridun Ay
, Gunther Roelkens
, Roel Baets
, Kerstin Wörhoff
, Markus Pollnau

Research output: Contribution to journal › Article › Academic › peer-review

116 Citations (Scopus)

265 Downloads (Pure)

Abstract

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

Original language	English
Pages (from-to)	27703-27711
Number of pages	9
Journal	Optics express
Volume	18
Issue number	26
DOIs	https://doi.org/10.1364/OE.18.027703
Publication status	Published - 20 Dec 2010

Keywords

EC Grant Agreement nr.: FP6/017501
Lasers and laser optics
Optical Amplifiers
Integrated Optics
IOMS-APD: Active Photonic Devices
Integrated optics materials

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10.1364/OE.18.027703Licence: CC BY

ArticleFinal published version, 1.09 MBLicence: CC BY

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title = "Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides",

abstract = "Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.",

keywords = "EC Grant Agreement nr.: FP6/017501, Lasers and laser optics, Optical Amplifiers, Integrated Optics, IOMS-APD: Active Photonic Devices, Integrated optics materials",

author = "Laura Agazzi and Bradley, \{Jonathan D.B.\} and Mindert Dijkstra and Feridun Ay and Gunther Roelkens and Roel Baets and Kerstin W{\"o}rhoff and Markus Pollnau",

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T1 - Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

AU - Agazzi, Laura

AU - Bradley, Jonathan D.B.

AU - Dijkstra, Mindert

AU - Ay, Feridun

AU - Roelkens, Gunther

AU - Baets, Roel

AU - Wörhoff, Kerstin

AU - Pollnau, Markus

N1 - Open access article

PY - 2010/12/20

Y1 - 2010/12/20

N2 - Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

AB - Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

KW - EC Grant Agreement nr.: FP6/017501

KW - Lasers and laser optics

KW - Optical Amplifiers

KW - Integrated Optics

KW - IOMS-APD: Active Photonic Devices

KW - Integrated optics materials

U2 - 10.1364/OE.18.027703

DO - 10.1364/OE.18.027703

M3 - Article

SN - 1094-4087

VL - 18

SP - 27703

EP - 27711

JO - Optics express

JF - Optics express

IS - 26

ER -

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

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Keywords

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