Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

Abstract

Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Place of PublicationWashington, D.C.
PublisherOptical Society of America
PagesITh1I.1
VolumePart F101-IPRSN 2018
ISBN (Electronic)9781557528209
ISBN (Print)978-1-943580-43-9
DOIs
Publication statusPublished - 1 Jan 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2 Jul 20185 Jul 2018

Publication series

NameAdvanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Abbreviated titleIPRSN 2018
CountrySwitzerland
CityZurich
Period2/07/185/07/18

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Photonics
Wavelength

Cite this

Mu, J., de Goede, M., Dijkstra, M., & García-Blanco, S. M. (2018). Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 (Vol. Part F101-IPRSN 2018, pp. ITh1I.1). [ITh1I.1] (Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)). Washington, D.C.: Optical Society of America. https://doi.org/10.1364/IPRSN.2018.ITh1I.1
Mu, Jinfeng ; de Goede, Michiel ; Dijkstra, Meindert ; García-Blanco, Sonia M. / Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Vol. Part F101-IPRSN 2018 Washington, D.C. : Optical Society of America, 2018. pp. ITh1I.1 (Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)).
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abstract = "Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.",
author = "Jinfeng Mu and {de Goede}, Michiel and Meindert Dijkstra and Garc{\'i}a-Blanco, {Sonia M.}",
year = "2018",
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Mu, J, de Goede, M, Dijkstra, M & García-Blanco, SM 2018, Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. in Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. vol. Part F101-IPRSN 2018, ITh1I.1, Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF), Optical Society of America, Washington, D.C., pp. ITh1I.1, Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, Switzerland, 2/07/18. https://doi.org/10.1364/IPRSN.2018.ITh1I.1

Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. / Mu, Jinfeng; de Goede, Michiel; Dijkstra, Meindert; García-Blanco, Sonia M.

Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Vol. Part F101-IPRSN 2018 Washington, D.C. : Optical Society of America, 2018. p. ITh1I.1 ITh1I.1 (Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)).

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

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PY - 2018/1/1

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Mu J, de Goede M, Dijkstra M, García-Blanco SM. Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Vol. Part F101-IPRSN 2018. Washington, D.C.: Optical Society of America. 2018. p. ITh1I.1. ITh1I.1. (Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)). https://doi.org/10.1364/IPRSN.2018.ITh1I.1