Abstract
Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.
| Original language | English |
|---|---|
| Title of host publication | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 |
| Place of Publication | Washington, D.C. |
| Publisher | Optical Society of America |
| Pages | ITh1I.1 |
| Volume | Part F101-IPRSN 2018 |
| ISBN (Electronic) | 9781557528209 |
| ISBN (Print) | 978-1-943580-43-9 |
| DOIs | |
| Publication status | Published - 1 Jan 2018 |
| Event | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2 Jul 2018 → 5 Jul 2018 |
Publication series
| Name | Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF) |
|---|
Conference
| Conference | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 |
|---|---|
| Abbreviated title | IPRSN 2018 |
| Country | Switzerland |
| City | Zurich |
| Period | 2/07/18 → 5/07/18 |
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Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. / Mu, Jinfeng; de Goede, Michiel; Dijkstra, Meindert; García-Blanco, Sonia M.
Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Vol. Part F101-IPRSN 2018 Washington, D.C. : Optical Society of America, 2018. p. ITh1I.1 ITh1I.1 (Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)).Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review
TY - CHAP
T1 - Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips
AU - Mu, Jinfeng
AU - de Goede, Michiel
AU - Dijkstra, Meindert
AU - García-Blanco, Sonia M.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.
AB - Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.
UR - http://www.scopus.com/inward/record.url?scp=85051250165&partnerID=8YFLogxK
UR - https://www.osapublishing.org/abstract.cfm?URI=IPRSN-2018-ITh1I.1
UR - http://www.mendeley.com/research/monolithic-integration-al2o3-si3n4-doublelayer-integrated-photonic-chips
U2 - 10.1364/IPRSN.2018.ITh1I.1
DO - 10.1364/IPRSN.2018.ITh1I.1
M3 - Chapter
SN - 978-1-943580-43-9
VL - Part F101-IPRSN 2018
T3 - Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)
SP - ITh1I.1
BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PB - Optical Society of America
CY - Washington, D.C.
ER -