Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips

Jinfeng Mu; Michiel de Goede; Meindert Dijkstra; Sonia M. García-Blanco

doi:10.1364/IPRSN.2018.ITh1I.1

Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips

Jinfeng Mu^*, Michiel de Goede, Meindert Dijkstra, Sonia M. García-Blanco

^*Corresponding author for this work

Optical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

Abstract

Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.

Original language	English
Title of host publication	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Place of Publication	Washington, D.C.
Publisher	Optical Society of America
Volume	Part F101-IPRSN 2018
ISBN (Electronic)	9781557528209
ISBN (Print)	978-1-943580-43-9
DOIs	https://doi.org/10.1364/IPRSN.2018.ITh1I.1
Publication status	Published - 1 Jan 2018
Event	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2 Jul 2018 → 5 Jul 2018

Conference

Conference	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Abbreviated title	IPRSN 2018
Country	Switzerland
City	Zurich
Period	2/07/18 → 5/07/18

Access to Document

10.1364/IPRSN.2018.ITh1I.1

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Mu, J., de Goede, M., Dijkstra, M., & García-Blanco, S. M. (2018). Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 (Vol. Part F101-IPRSN 2018). [ITh1I.1] Washington, D.C.: Optical Society of America. https://doi.org/10.1364/IPRSN.2018.ITh1I.1

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abstract = "Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.",

author = "Jinfeng Mu and {de Goede}, Michiel and Meindert Dijkstra and Garc{\'i}a-Blanco, {Sonia M.}",

year = "2018",

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doi = "10.1364/IPRSN.2018.ITh1I.1",

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Mu, J, de Goede, M, Dijkstra, M & García-Blanco, SM 2018, Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. in Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. vol. Part F101-IPRSN 2018, ITh1I.1, Optical Society of America, Washington, D.C., Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, Switzerland, 2/07/18. https://doi.org/10.1364/IPRSN.2018.ITh1I.1

Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. / Mu, Jinfeng; de Goede, Michiel; Dijkstra, Meindert ; García-Blanco, Sonia M.

Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Vol. Part F101-IPRSN 2018 Washington, D.C. : Optical Society of America, 2018. ITh1I.1.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Academic › peer-review

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AB - Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.

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