Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips

Jinfeng Mu*, Michiel de Goede, Meindert Dijkstra, Sonia M. García-Blanco

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

Abstract

Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Place of PublicationWashington, D.C.
PublisherOptical Society of America
VolumePart F101-IPRSN 2018
ISBN (Electronic)9781557528209
ISBN (Print)978-1-943580-43-9
DOIs
Publication statusPublished - 1 Jan 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2 Jul 20185 Jul 2018

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Abbreviated titleIPRSN 2018
CountrySwitzerland
CityZurich
Period2/07/185/07/18

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  • Cite this

    Mu, J., de Goede, M., Dijkstra, M., & García-Blanco, S. M. (2018). Monolithic integration of Al2O3 and Si3N4 for double-layer integrated photonic chips. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 (Vol. Part F101-IPRSN 2018). [ITh1I.1] Washington, D.C.: Optical Society of America. https://doi.org/10.1364/IPRSN.2018.ITh1I.1