Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis

S. Radovanovic, Anne J. Annema, Bram Nauta

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Abstract

    Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-speed optical receivers are analyzed and the advantages and drawbacks concerning bandwidth with respect to the diode geometry and structure, are discussed. Studied photodiode structures that can be realized in standard CMOS technology are: 1) N-well/Psubstrate, 2) lateral N-well/P-substrate (exploiting only depletion region in between) 3) N+/P-substrate and 4) P+/N-well/P-substrate diodes. The maximal operating frequency as well as the impulse response of the diodes are calculated using 2-D model semiconductor device analysis.
    Original languageUndefined
    Title of host publicationthe 13th ProRISC workshop on Circuits, Systems and Signal Processing
    Place of PublicationUtrecht
    PublisherSTW
    Pages425-431
    Number of pages7
    ISBN (Print)90-73461-33-2
    Publication statusPublished - Nov 2002
    Event13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002 - Veldhoven, Netherlands
    Duration: 28 Nov 200229 Nov 2002
    Conference number: 13

    Publication series

    Name
    PublisherSTW Technology Foundation

    Workshop

    Workshop13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002
    CountryNetherlands
    CityVeldhoven
    Period28/11/0229/11/02

    Keywords

    • METIS-208124
    • CMOS photodiode
    • Quantum efficiency
    • high-speed optical receiver
    • monolithic integration
    • EWI-14413
    • IR-67438

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