Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis

S. Radovanovic; Anne J. Annema; Bram Nauta

Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis

S. Radovanovic
, Anne J. Annema
, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

145 Downloads (Pure)

Abstract

Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-speed optical receivers are analyzed and the advantages and drawbacks concerning bandwidth with respect to the diode geometry and structure, are discussed. Studied photodiode structures that can be realized in standard CMOS technology are: 1) N-well/Psubstrate, 2) lateral N-well/P-substrate (exploiting only depletion region in between) 3) N+/P-substrate and 4) P+/N-well/P-substrate diodes. The maximal operating frequency as well as the impulse response of the diodes are calculated using 2-D model semiconductor device analysis.

Original language	Undefined
Title of host publication	the 13th ProRISC workshop on Circuits, Systems and Signal Processing
Place of Publication	Utrecht
Publisher	STW
Pages	425-431
Number of pages	7
ISBN (Print)	90-73461-33-2
Publication status	Published - Nov 2002
Event	13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002 - Veldhoven, Netherlands Duration: 28 Nov 2002 → 29 Nov 2002 Conference number: 13

Publication series

Name
Publisher	STW Technology Foundation

Workshop

Workshop	13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002
Country/Territory	Netherlands
City	Veldhoven
Period	28/11/02 → 29/11/02

Keywords

METIS-208124
CMOS photodiode
Quantum efficiency
high-speed optical receiver
monolithic integration
EWI-14413
IR-67438

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Cite this

@inproceedings{d6d15961298c44098966f85a9ce205bc,

title = "Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis",

abstract = "Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-speed optical receivers are analyzed and the advantages and drawbacks concerning bandwidth with respect to the diode geometry and structure, are discussed. Studied photodiode structures that can be realized in standard CMOS technology are: 1) N-well/Psubstrate, 2) lateral N-well/P-substrate (exploiting only depletion region in between) 3) N+/P-substrate and 4) P+/N-well/P-substrate diodes. The maximal operating frequency as well as the impulse response of the diodes are calculated using 2-D model semiconductor device analysis.",

keywords = "METIS-208124, CMOS photodiode, Quantum efficiency, high-speed optical receiver, monolithic integration, EWI-14413, IR-67438",

author = "S. Radovanovic and Annema, \{Anne J.\} and Bram Nauta",

note = "Best Poster Award ; 13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002 ; Conference date: 28-11-2002 Through 29-11-2002",

year = "2002",

month = nov,

language = "Undefined",

isbn = "90-73461-33-2",

publisher = "STW",

pages = "425--431",

booktitle = "the 13th ProRISC workshop on Circuits, Systems and Signal Processing",

}

Radovanovic, S, Annema, AJ & Nauta, B 2002, Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis. in the 13th ProRISC workshop on Circuits, Systems and Signal Processing. STW, Utrecht, pp. 425-431, 13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002, Veldhoven, Netherlands, 28/11/02.

Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis. / Radovanovic, S.; Annema, Anne J.; Nauta, Bram.
the 13th ProRISC workshop on Circuits, Systems and Signal Processing. Utrecht: STW, 2002. p. 425-431.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis

AU - Radovanovic, S.

AU - Annema, Anne J.

AU - Nauta, Bram

N1 - Conference code: 13

PY - 2002/11

Y1 - 2002/11

N2 - Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-speed optical receivers are analyzed and the advantages and drawbacks concerning bandwidth with respect to the diode geometry and structure, are discussed. Studied photodiode structures that can be realized in standard CMOS technology are: 1) N-well/Psubstrate, 2) lateral N-well/P-substrate (exploiting only depletion region in between) 3) N+/P-substrate and 4) P+/N-well/P-substrate diodes. The maximal operating frequency as well as the impulse response of the diodes are calculated using 2-D model semiconductor device analysis.

AB - Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-speed optical receivers are analyzed and the advantages and drawbacks concerning bandwidth with respect to the diode geometry and structure, are discussed. Studied photodiode structures that can be realized in standard CMOS technology are: 1) N-well/Psubstrate, 2) lateral N-well/P-substrate (exploiting only depletion region in between) 3) N+/P-substrate and 4) P+/N-well/P-substrate diodes. The maximal operating frequency as well as the impulse response of the diodes are calculated using 2-D model semiconductor device analysis.

KW - METIS-208124

KW - CMOS photodiode

KW - Quantum efficiency

KW - high-speed optical receiver

KW - monolithic integration

KW - EWI-14413

KW - IR-67438

M3 - Conference contribution

SN - 90-73461-33-2

SP - 425

EP - 431

BT - the 13th ProRISC workshop on Circuits, Systems and Signal Processing

PB - STW

CY - Utrecht

T2 - 13th Workshop on Circuits, Systems and Signal Processing, ProRISC 2002

Y2 - 28 November 2002 through 29 November 2002

ER -