Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon

Yiping Zhao, Johan W. Berenschot, Henricus V. Jansen, Niels Roelof Tas, Jurriaan Huskens, Michael Curt Elwenspoek

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Abstract

A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The stamp is created in <110> single crystalline silicon using a full wet etching procedure including local oxidation of silicon (LOCOS)and employing an adapted edge lithography technique on top of conventional photolithography. Ridges down to 10 nm in width have been produced. The silicon ridges have no inbuilt stress and are therefore less fragile than previously fabricated oxide ridges. The ridge sample is used as a template in T-NIL and a full 100 mm wafer size imprint has been successfully carried out in both polymethylmethacrylate (PMMA) and mr-I 7020E polymer. Moreover, the imprinted pattern in PMMA is subsequently transferred into a device wafer
Original languageEnglish
Title of host publication34th International Conference on Micro & Nano Enginering
Place of PublicationGreece
PublisherErgo Publications
Pages221
Number of pages2
ISBN (Print)not assigned
Publication statusPublished - 2008
Event34th International Conference on Micro & Nano Engineering, MNE 2008 - Athens, Greece
Duration: 15 Sep 200819 Sep 2008
Conference number: 34

Publication series

Name
PublisherErgo publications

Conference

Conference34th International Conference on Micro & Nano Engineering, MNE 2008
Abbreviated titleMNE
CountryGreece
CityAthens
Period15/09/0819/09/08

Keywords

  • EWI-14672
  • METIS-255424
  • IR-65241

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    Zhao, Y., Berenschot, J. W., Jansen, H. V., Tas, N. R., Huskens, J., & Elwenspoek, M. C. (2008). Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon. In 34th International Conference on Micro & Nano Enginering (pp. 221). Greece: Ergo Publications.