Abstract
A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The
stamp is created in <110> single crystalline silicon using a full wet etching procedure including local oxidation of silicon (LOCOS)and employing an adapted edge lithography technique on top of conventional photolithography. Ridges down to 10 nm in width have been produced. The silicon ridges have no inbuilt stress and are therefore less fragile than previously fabricated oxide ridges. The ridge sample is used as a template in T-NIL and a full 100 mm wafer size imprint has been successfully carried out in both
polymethylmethacrylate (PMMA) and mr-I 7020E polymer. Moreover, the imprinted pattern in PMMA is subsequently transferred into a device wafer
Original language | English |
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Title of host publication | 34th International Conference on Micro & Nano Enginering |
Place of Publication | Greece |
Publisher | Ergo Publications |
Pages | 221 |
Number of pages | 2 |
ISBN (Print) | not assigned |
Publication status | Published - 2008 |
Event | 34th International Conference on Micro & Nano Engineering, MNE 2008 - Athens, Greece Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 34 |
Publication series
Name | |
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Publisher | Ergo publications |
Conference
Conference | 34th International Conference on Micro & Nano Engineering, MNE 2008 |
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Abbreviated title | MNE |
Country/Territory | Greece |
City | Athens |
Period | 15/09/08 → 19/09/08 |
Keywords
- EWI-14672
- METIS-255424
- IR-65241