Monte Carlo simulation of wet chemical etching of silicon

Erik van Veenendaal, J. van Suchtelen, Paul van Beurden, Herma M. Cuppen, Willem J.P. van Enckevort, A.J. Nijdam, Michael Curt Elwenspoek, Elias Vlieg

    Research output: Contribution to journalArticleAcademicpeer-review

    Abstract

    The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.
    Original languageUndefined
    Pages (from-to)343-350
    Number of pages8
    JournalSensors and materials
    Volume13
    Issue number6
    Publication statusPublished - 1 Dec 2001

    Keywords

    • EWI-12777
    • IR-42348
    • METIS-201133

    Cite this

    van Veenendaal, E., van Suchtelen, J., van Beurden, P., Cuppen, H. M., van Enckevort, W. J. P., Nijdam, A. J., ... Vlieg, E. (2001). Monte Carlo simulation of wet chemical etching of silicon. Sensors and materials, 13(6), 343-350.