Monte Carlo simulation of wet chemical etching of silicon

Erik van Veenendaal; J. van Suchtelen; Paul van Beurden; Herma M. Cuppen; Willem J.P. van Enckevort; A.J. Nijdam; Michael Curt Elwenspoek; Elias Vlieg

Monte Carlo simulation of wet chemical etching of silicon

Erik van Veenendaal, J. van Suchtelen, Paul van Beurden, Herma M. Cuppen, Willem J.P. van Enckevort, A.J. Nijdam, Michael Curt Elwenspoek, Elias Vlieg

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Abstract

The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.

Original language	Undefined
Pages (from-to)	343-350
Number of pages	8
Journal	Sensors and materials
Volume	13
Issue number	6
Publication status	Published - 1 Dec 2001

Keywords

EWI-12777
IR-42348
METIS-201133

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Cite this

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title = "Monte Carlo simulation of wet chemical etching of silicon",

abstract = "The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.",

keywords = "EWI-12777, IR-42348, METIS-201133",

author = "{van Veenendaal}, Erik and {van Suchtelen}, J. and {van Beurden}, Paul and Cuppen, {Herma M.} and {van Enckevort}, {Willem J.P.} and A.J. Nijdam and Elwenspoek, {Michael Curt} and Elias Vlieg",

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volume = "13",

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T1 - Monte Carlo simulation of wet chemical etching of silicon

AU - van Veenendaal, Erik

AU - van Suchtelen, J.

AU - van Beurden, Paul

AU - Cuppen, Herma M.

AU - van Enckevort, Willem J.P.

AU - Nijdam, A.J.

AU - Elwenspoek, Michael Curt

AU - Vlieg, Elias

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.

AB - The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.

KW - EWI-12777

KW - IR-42348

KW - METIS-201133

M3 - Article

SN - 0914-4935

VL - 13

SP - 343

EP - 350

JO - Sensors and materials

JF - Sensors and materials

IS - 6

ER -