Monte Carlo simulation of wet chemical etching of silicon

Erik van Veenendaal, J. van Suchtelen, Paul van Beurden, Herma M. Cuppen, Willem J.P. van Enckevort, A.J. Nijdam, Michael Curt Elwenspoek, Elias Vlieg

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    The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.
    Original languageUndefined
    Pages (from-to)343-350
    Number of pages8
    JournalSensors and materials
    Issue number6
    Publication statusPublished - 1 Dec 2001


    • EWI-12777
    • IR-42348
    • METIS-201133

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