Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching

L. Capuano (Corresponding Author), R. Pohl, R. M. Tiggelaar, J. W. Berenschot, J. G.E. Gardeniers, G.R.B.E. Römer

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)
24 Downloads (Pure)

Abstract

The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of processing. In addition, a qualitative analysis of the material transformation after irradiation is provided as well as an analysis of cracking phenomena. Finally, a calculated laser intensity profile inside sapphire, using the Point Spread Function (PSF), is compared to the shape of the modifications. This comparison is employed to calculate the intensity threshold leading to amorphization, which equals 2.5.1014 ± 0.4.1014 W/cm2.

Original languageEnglish
Pages (from-to)29283-29295
Number of pages13
JournalOptics express
Volume26
Issue number22
DOIs
Publication statusPublished - 29 Oct 2018

Fingerprint

picosecond pulses
sapphire
etching
lasers
qualitative analysis
point spread functions
pulses
pulsed lasers
pulse duration
irradiation
thresholds
profiles
energy

Cite this

@article{4763105700ba491f9180e409ff27ce50,
title = "Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching",
abstract = "The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of processing. In addition, a qualitative analysis of the material transformation after irradiation is provided as well as an analysis of cracking phenomena. Finally, a calculated laser intensity profile inside sapphire, using the Point Spread Function (PSF), is compared to the shape of the modifications. This comparison is employed to calculate the intensity threshold leading to amorphization, which equals 2.5.1014 ± 0.4.1014 W/cm2.",
author = "L. Capuano and R. Pohl and Tiggelaar, {R. M.} and Berenschot, {J. W.} and Gardeniers, {J. G.E.} and G.R.B.E. R{\"o}mer",
year = "2018",
month = "10",
day = "29",
doi = "10.1364/OE.26.029283",
language = "English",
volume = "26",
pages = "29283--29295",
journal = "Optics express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "22",

}

Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching. / Capuano, L. (Corresponding Author); Pohl, R.; Tiggelaar, R. M.; Berenschot, J. W.; Gardeniers, J. G.E.; Römer, G.R.B.E.

In: Optics express, Vol. 26, No. 22, 29.10.2018, p. 29283-29295.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Morphology of single picosecond pulse subsurface laser-induced modifications of sapphire and subsequent selective etching

AU - Capuano, L.

AU - Pohl, R.

AU - Tiggelaar, R. M.

AU - Berenschot, J. W.

AU - Gardeniers, J. G.E.

AU - Römer, G.R.B.E.

PY - 2018/10/29

Y1 - 2018/10/29

N2 - The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of processing. In addition, a qualitative analysis of the material transformation after irradiation is provided as well as an analysis of cracking phenomena. Finally, a calculated laser intensity profile inside sapphire, using the Point Spread Function (PSF), is compared to the shape of the modifications. This comparison is employed to calculate the intensity threshold leading to amorphization, which equals 2.5.1014 ± 0.4.1014 W/cm2.

AB - The effect of 1030nm single picosecond pulsed laser-induced modification of the bulk of crystalline sapphire using a combined process of laser amorphization and selective wet chemical etching is studied. Pulse durations of more than 1 picosecond are not commonly used for this subsurface process. We examine the effect of 7 picosecond pulses on the morphology of the unetched, as well as etched, single pulse modifications, showing the variation of shape and size when varying the pulse energy and the depth of processing. In addition, a qualitative analysis of the material transformation after irradiation is provided as well as an analysis of cracking phenomena. Finally, a calculated laser intensity profile inside sapphire, using the Point Spread Function (PSF), is compared to the shape of the modifications. This comparison is employed to calculate the intensity threshold leading to amorphization, which equals 2.5.1014 ± 0.4.1014 W/cm2.

UR - http://www.scopus.com/inward/record.url?scp=85055770168&partnerID=8YFLogxK

U2 - 10.1364/OE.26.029283

DO - 10.1364/OE.26.029283

M3 - Article

VL - 26

SP - 29283

EP - 29295

JO - Optics express

JF - Optics express

SN - 1094-4087

IS - 22

ER -