MOSFET 1/f noise measurement under switched bias conditions

A.P. van der Wel, Eric A.M. Klumperink, Sander L.J. Gierkink, R.F. Wassenaar, Hans Wallinga

    Research output: Contribution to journalArticleAcademicpeer-review

    60 Citations (Scopus)
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    A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's under switched bias conditions in a wide frequency band (10 Hz-100 kHz). When switching between inversion and accumulation, MOSFET's of different manufacturers invariably show reduced 1/f noise power density for frequencies below the switching frequency. At low frequencies (10 Hz), a 5-8 dB reduction in intrinsic 1/f noise power density is found for different devices, largely independent of the switching frequency (up to 1 MHz). The switched bias measurements render detailed wideband 1/f noise spectra of switched MOSFET's, which is useful for 1/f noise model validation and analog circuit design
    Original languageEnglish
    Pages (from-to)43-46
    JournalIEEE electron device letters
    Issue number1
    Publication statusPublished - 2000


    • METIS-111658
    • IR-14532


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