MOSFET Degradation Under RF Stress

G.T. Sasse; F.G. Kuper; Jurriaan Schmitz

doi:10.1109/TED.2008.2004650

MOSFET Degradation Under RF Stress

G.T. Sasse, F.G. Kuper, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

42 Citations (Scopus)

698 Downloads (Pure)

Abstract

We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.

Original language	English
Pages (from-to)	3167-3174
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	WoTUG-31/11
DOIs	https://doi.org/10.1109/TED.2008.2004650
Publication status	Published - 1 Nov 2008

Keywords

METIS-254981
EWI-14577
IR-62597
SC-ICRY: Integrated Circuit Reliability and Yield

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10.1109/TED.2008.2004650

RF_degradation_twocolSubmitted version, 150 KBLicence: Unspecified

42 Citations
1 Article

Corrections to “MOSFET Degradation Under RF Stress” (IEEE Transactions on Electron Devices (2009) 56(1) (157))
Sasse, G. T., Kuper, F. G. & Schmitz, J., 2009, In: IEEE Transactions on Electron Devices.
Research output: Contribution to journal › Article › Academic › peer-review

1 Downloads (Pure)

Cite this

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abstract = "We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.",

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N2 - We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.

AB - We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.

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KW - SC-ICRY: Integrated Circuit Reliability and Yield

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MOSFET Degradation Under RF Stress

Abstract

Keywords

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Research output

Corrections to “MOSFET Degradation Under RF Stress” (IEEE Transactions on Electron Devices (2009) 56(1) (157))

Cite this