MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation

M.M. Lunenborg

    Research output: Thesis › PhD Thesis - Research UT, graduation UT › Academic

    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Verweij, J.F., Supervisor
    • Mouthaan, A.J., Advisor
    Award date18 Oct 1996
    Place of PublicationEnschede
    Publisher
    Print ISBNs90-9009761-9
    Publication statusPublished - 18 Oct 1996

    Keywords

    • METIS-111442

    Cite this

    Lunenborg, M.M.. / MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation. Enschede : Universiteit Twente, 1996. 180 p.
    @phdthesis{7e8aa30300b64027bba4088d58119445,
    title = "MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation",
    keywords = "METIS-111442",
    author = "M.M. Lunenborg",
    year = "1996",
    month = "10",
    day = "18",
    language = "Undefined",
    isbn = "90-9009761-9",
    publisher = "Universiteit Twente",
    school = "University of Twente",

    }

    Lunenborg, MM 1996, 'MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation', University of Twente, Enschede.

    MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation. / Lunenborg, M.M.

    Enschede : Universiteit Twente, 1996. 180 p.

    Research output: Thesis › PhD Thesis - Research UT, graduation UT › Academic

    TY - THES

    T1 - MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation

    AU - Lunenborg, M.M.

    PY - 1996/10/18

    Y1 - 1996/10/18

    KW - METIS-111442

    M3 - PhD Thesis - Research UT, graduation UT

    SN - 90-9009761-9

    PB - Universiteit Twente

    CY - Enschede

    ER -

    Lunenborg MM. MOSFET hot-carrier degradation - Failure mechanisms and models for reliability circuit simulation. Enschede: Universiteit Twente, 1996. 180 p.