MOSFETs on self-assembled SiGe dots with strain-enhanced mobility

V. Jovanović*, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher, J. Gerharz, G. Mussler, J. Van Der Cingel, J. Zhang, G. Bauer, O. G. Schmidt, L. Miglio

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages926-928
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China
Duration: 1 Nov 20104 Nov 2010
Conference number: 10

Conference

Conference10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
CountryChina
CityShanghai
Period1/11/104/11/10

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Jovanović, V., Biasotto, C., Nanver, L. K., Moers, J., Grützmacher, D., Gerharz, J., ... Miglio, L. (2010). MOSFETs on self-assembled SiGe dots with strain-enhanced mobility. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 926-928). [5667482] https://doi.org/10.1109/ICSICT.2010.5667482