MOSFETs on self-assembled SiGe dots with strain-enhanced mobility

V. Jovanović; C. Biasotto; L. K. Nanver; J. Moers; D. Grützmacher; J. Gerharz; G. Mussler; J. Van Der Cingel; J. Zhang; G. Bauer; O. G. Schmidt; L. Miglio

doi:10.1109/ICSICT.2010.5667482

MOSFETs on self-assembled SiGe dots with strain-enhanced mobility

V. Jovanović^*
, C. Biasotto
, L. K. Nanver
, J. Moers
, D. Grützmacher
, J. Gerharz
, G. Mussler
, J. Van Der Cingel
, J. Zhang
, G. Bauer
, O. G. Schmidt
, L. Miglio

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	926-928
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667482
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 10

Conference

Conference	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

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10.1109/ICSICT.2010.5667482

Cite this

Jovanović, V., Biasotto, C., Nanver, L. K., Moers, J., Grützmacher, D., Gerharz, J., Mussler, G., Van Der Cingel, J., Zhang, J., Bauer, G., Schmidt, O. G., & Miglio, L. (2010). MOSFETs on self-assembled SiGe dots with strain-enhanced mobility. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 926-928). Article 5667482 https://doi.org/10.1109/ICSICT.2010.5667482

@inproceedings{4c3c94d37eaa4070ae17d89f69304a0b,

title = "MOSFETs on self-assembled SiGe dots with strain-enhanced mobility",

abstract = "Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5\% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.",

author = "V. Jovanovi{\'c} and C. Biasotto and Nanver, \{L. K.\} and J. Moers and D. Gr{\"u}tzmacher and J. Gerharz and G. Mussler and \{Van Der Cingel\}, J. and J. Zhang and G. Bauer and Schmidt, \{O. G.\} and L. Miglio",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667482",

language = "English",

isbn = "9781424457984",

pages = "926--928",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

}

Jovanović, V, Biasotto, C, Nanver, LK, Moers, J, Grützmacher, D, Gerharz, J, Mussler, G, Van Der Cingel, J, Zhang, J, Bauer, G, Schmidt, OG & Miglio, L 2010, MOSFETs on self-assembled SiGe dots with strain-enhanced mobility. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667482, pp. 926-928, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667482

MOSFETs on self-assembled SiGe dots with strain-enhanced mobility. / Jovanović, V.; Biasotto, C.; Nanver, L. K. et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 926-928 5667482.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - MOSFETs on self-assembled SiGe dots with strain-enhanced mobility

AU - Jovanović, V.

AU - Biasotto, C.

AU - Nanver, L. K.

AU - Moers, J.

AU - Grützmacher, D.

AU - Gerharz, J.

AU - Mussler, G.

AU - Van Der Cingel, J.

AU - Zhang, J.

AU - Bauer, G.

AU - Schmidt, O. G.

AU - Miglio, L.

N1 - Conference code: 10

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

AB - Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

UR - https://www.scopus.com/pages/publications/78751530304

U2 - 10.1109/ICSICT.2010.5667482

DO - 10.1109/ICSICT.2010.5667482

M3 - Conference contribution

AN - SCOPUS:78751530304

SN - 9781424457984

SP - 926

EP - 928

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010

Y2 - 1 November 2010 through 4 November 2010

ER -

MOSFETs on self-assembled SiGe dots with strain-enhanced mobility

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