Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

V.K. Guduru, A. McCollam, J.C. Maan, U. Zeitler, Sander Wenderich, Michelle Kruize, Alexander Brinkman, Mark Huijben, Gertjan Koster, David H.A. Blank, Augustinus J.H.M. Rijnders, H. Hilgenkamp

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.
Original languageUndefined
Pages (from-to)437-440
Number of pages4
JournalJournal of the Korean Physical Society
Volume63
DOIs
Publication statusPublished - 2013

Keywords

  • METIS-301547
  • IR-90113

Cite this

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title = "Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures",
abstract = "We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.",
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author = "V.K. Guduru and A. McCollam and J.C. Maan and U. Zeitler and Sander Wenderich and Michelle Kruize and Alexander Brinkman and Mark Huijben and Gertjan Koster and Blank, {David H.A.} and Rijnders, {Augustinus J.H.M.} and H. Hilgenkamp",
year = "2013",
doi = "10.3938/jkps.63.437",
language = "Undefined",
volume = "63",
pages = "437--440",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",

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Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures. / Guduru, V.K.; McCollam, A.; Maan, J.C.; Zeitler, U.; Wenderich, Sander; Kruize, Michelle; Brinkman, Alexander; Huijben, Mark; Koster, Gertjan; Blank, David H.A.; Rijnders, Augustinus J.H.M.; Hilgenkamp, H.

In: Journal of the Korean Physical Society, Vol. 63, 2013, p. 437-440.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

AU - Guduru, V.K.

AU - McCollam, A.

AU - Maan, J.C.

AU - Zeitler, U.

AU - Wenderich, Sander

AU - Kruize, Michelle

AU - Brinkman, Alexander

AU - Huijben, Mark

AU - Koster, Gertjan

AU - Blank, David H.A.

AU - Rijnders, Augustinus J.H.M.

AU - Hilgenkamp, H.

PY - 2013

Y1 - 2013

N2 - We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

AB - We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

KW - METIS-301547

KW - IR-90113

U2 - 10.3938/jkps.63.437

DO - 10.3938/jkps.63.437

M3 - Article

VL - 63

SP - 437

EP - 440

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

ER -