Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

V.K. Guduru; A. McCollam; J.C. Maan; U. Zeitler; Sander Wenderich; Michelle Kruize; Alexander Brinkman; Mark Huijben; Gertjan Koster; David H.A. Blank; Augustinus J.H.M. Rijnders; H. Hilgenkamp

doi:10.3938/jkps.63.437

Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

V.K. Guduru, A. McCollam, J.C. Maan, U. Zeitler, Sander Wenderich, Michelle Kruize, Alexander Brinkman, Mark Huijben, Gertjan Koster, David H.A. Blank, Augustinus J.H.M. Rijnders, H. Hilgenkamp

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

Abstract

We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

Original language	Undefined
Pages (from-to)	437-440
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	63
DOIs	https://doi.org/10.3938/jkps.63.437
Publication status	Published - 2013

Keywords

METIS-301547
IR-90113

Access to Document

10.3938/jkps.63.437

Cite this

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title = "Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures",

abstract = "We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.",

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doi = "10.3938/jkps.63.437",

language = "Undefined",

volume = "63",

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journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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TY - JOUR

T1 - Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

AU - Guduru, V.K.

AU - McCollam, A.

AU - Maan, J.C.

AU - Zeitler, U.

AU - Wenderich, Sander

AU - Kruize, Michelle

AU - Brinkman, Alexander

AU - Huijben, Mark

AU - Koster, Gertjan

AU - Blank, David H.A.

AU - Rijnders, Augustinus J.H.M.

AU - Hilgenkamp, H.

PY - 2013

Y1 - 2013

N2 - We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

AB - We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

KW - METIS-301547

KW - IR-90113

U2 - 10.3938/jkps.63.437

DO - 10.3938/jkps.63.437

M3 - Article

SN - 0374-4884

VL - 63

SP - 437

EP - 440

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

ER -