Multi-silicon ridge nanofabrication by repeated edge lithography

Yiping Zhao, Johan W. Berenschot, Henricus V. Jansen, Niels Roelof Tas, Jurriaan Huskens, Michael Curt Elwenspoek

Research output: Contribution to journalArticleAcademicpeer-review

26 Citations (Scopus)
260 Downloads (Pure)


We present a multi-Si nanoridge fabrication scheme and its application in nanoimprint lithography (NIL). Triple Si nanoridges approximately 120 nm high and 40 nm wide separated by 40 nm spacing are fabricated and successfully applied as a stamp in nanoimprint lithography. The fabrication scheme, using a full-wet etching procedure in combination with repeated edge lithography, consists of hot H3PO4 acid SiNx retraction etching, 20% KOH Si etching, 50% HF SiNx retraction etching and LOCal Oxidation of Silicon (LOCOS). Si nanoridges with smooth vertical sidewalls are fabricated by using Si 110 substrates and KOH etching. The presented technology utilizes a conventional photolithography technique, and the fabrication of multi-Si nanoridges on a full wafer scale has been demonstrated.
Original languageEnglish
Article number10.1088/0957-4484/20/31/315305
Pages (from-to)1-7
Number of pages7
Issue number315305
Publication statusPublished - 13 Jul 2009


  • EWI-16027
  • IR-67589
  • METIS-259868


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