Multilayer coatings for the EUVL Process Development Tool

E. Louis; E. Zoethout; R.W.E. van de Kruijs; I. Nedelcu; A.E. Yakshin; S. Alonso van der Westen; T. Tsarfati; F. Bijkerk; H. Enkisch; S. Müllender

doi:10.1117/12.619856

Multilayer coatings for the EUVL Process Development Tool

E. Louis^*, E. Zoethout, R.W.E. van de Kruijs, I. Nedelcu, A.E. Yakshin, S. Alonso van der Westen, T. Tsarfati, F. Bijkerk, H. Enkisch, S. Müllender

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

11 Citations (Scopus)

Abstract

Reported is a summary of the coating of three elements of the illuminator and three of the projection optics of the EUVL Process Development Tool. The coating process used is e-beam evaporation in combination with low energy ion beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65% and the non correctable figure error that is added by the full multilayer stack is controlled to better than 15 picometer.

Original language	English
Article number	154
Pages (from-to)	1170-1177
Number of pages	8
Journal	Progress in Biomedical Optics and Imaging
Volume	5751
Issue number	II
DOIs	https://doi.org/10.1117/12.619856
Publication status	Published - 19 Sept 2005
Externally published	Yes
Event	Emerging Lithographic Technologies IX 2005 - San Jose, United States Duration: 1 Mar 2005 → 3 Mar 2005 Conference number: 9

Keywords

EUV Lithography
Mo/Si multilayers

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10.1117/12.619856

Cite this

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abstract = "Reported is a summary of the coating of three elements of the illuminator and three of the projection optics of the EUVL Process Development Tool. The coating process used is e-beam evaporation in combination with low energy ion beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65% and the non correctable figure error that is added by the full multilayer stack is controlled to better than 15 picometer.",

keywords = "EUV Lithography, Mo/Si multilayers",

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AU - Louis, E.

AU - Zoethout, E.

AU - van de Kruijs, R.W.E.

AU - Nedelcu, I.

AU - Yakshin, A.E.

AU - Alonso van der Westen, S.

AU - Tsarfati, T.

AU - Bijkerk, F.

AU - Enkisch, H.

AU - Müllender, S.

N1 - Conference code: 9

PY - 2005/9/19

Y1 - 2005/9/19

N2 - Reported is a summary of the coating of three elements of the illuminator and three of the projection optics of the EUVL Process Development Tool. The coating process used is e-beam evaporation in combination with low energy ion beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65% and the non correctable figure error that is added by the full multilayer stack is controlled to better than 15 picometer.

AB - Reported is a summary of the coating of three elements of the illuminator and three of the projection optics of the EUVL Process Development Tool. The coating process used is e-beam evaporation in combination with low energy ion beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65% and the non correctable figure error that is added by the full multilayer stack is controlled to better than 15 picometer.

KW - EUV Lithography

KW - Mo/Si multilayers

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DO - 10.1117/12.619856

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IS - II

M1 - 154

T2 - Emerging Lithographic Technologies IX 2005

Y2 - 1 March 2005 through 3 March 2005

ER -

Multilayer coatings for the EUVL Process Development Tool

Abstract

Keywords

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