Multilayer development for the generation beyond EUV: 6.x nm

Igor Alexandrovich Makhotkin, E. Zoethout, S.L. Nyabero, Viacheslav Medvedev, Robbert Wilhelmus Elisabeth van de Kruijs, Eric Louis, A.M. Yakunin, V. Banine, S. Muellender, Frederik Bijkerk

Research output: Contribution to conferencePoster

Abstract

6.7 nm — one of the possible candidate for next generation lithography optics needed LaN/B one of the most promising material combinations: à La and B show highest optical contrast for 6.7 nm wavelength à Nitridation of La increases optical contrast Narrow bandwidth of ML reflectance à ultimate reflectivity form the stack required
Original languageUndefined
Pages-
Publication statusPublished - 20 Jun 2013
Event14th ASML Technology Conference 2013 - Hotel NH Eindhoven Conference Centre Koningshof, Eindhoven, Netherlands
Duration: 20 Jun 201320 Jun 2013
Conference number: 14

Conference

Conference14th ASML Technology Conference 2013
CountryNetherlands
CityEindhoven
Period20/06/1320/06/13

Keywords

  • METIS-299685

Cite this

Makhotkin, I. A., Zoethout, E., Nyabero, S. L., Medvedev, V., van de Kruijs, R. W. E., Louis, E., ... Bijkerk, F. (2013). Multilayer development for the generation beyond EUV: 6.x nm. -. Poster session presented at 14th ASML Technology Conference 2013, Eindhoven, Netherlands.