Multilayer development for the generation beyond EUV: 6.x nm

Igor Alexandrovich Makhotkin, E. Zoethout, S.L. Nyabero, Viacheslav Medvedev, Robbert Wilhelmus Elisabeth van de Kruijs, Eric Louis, A.M. Yakunin, V. Banine, S. Muellender, Frederik Bijkerk

Research output: Contribution to conferencePosterOther research output

Abstract

6.7 nm — one of the possible candidate for next generation lithography optics needed LaN/B one of the most promising material combinations: à La and B show highest optical contrast for 6.7 nm wavelength à Nitridation of La increases optical contrast Narrow bandwidth of ML reflectance à ultimate reflectivity form the stack required
Original languageUndefined
Pages-
Publication statusPublished - 20 Jun 2013
Event14th ASML Technology Conference 2013 - Hotel NH Eindhoven Conference Centre Koningshof, Eindhoven, Netherlands
Duration: 20 Jun 201320 Jun 2013
Conference number: 14

Conference

Conference14th ASML Technology Conference 2013
CountryNetherlands
CityEindhoven
Period20/06/1320/06/13

Keywords

  • METIS-299685

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