Multilayer development for the generation beyond EUV: 6.x nm

Igor Alexandrovich Makhotkin, E. Zoethout, S.L. Nyabero, Viacheslav Medvedev, Robbert Wilhelmus Elisabeth van de Kruijs, Eric Louis, A.M. Yakunin, V. Banine, S. Muellender, Frederik Bijkerk

Research output: Contribution to conferencePoster

Abstract

6.7 nm — one of the possible candidate for next generation lithography optics needed LaN/B one of the most promising material combinations: à La and B show highest optical contrast for 6.7 nm wavelength à Nitridation of La increases optical contrast Narrow bandwidth of ML reflectance à ultimate reflectivity form the stack required
Original languageUndefined
Pages-
Publication statusPublished - 20 Jun 2013
Event14th ASML Technology Conference 2013 - Hotel NH Eindhoven Conference Centre Koningshof, Eindhoven, Netherlands
Duration: 20 Jun 201320 Jun 2013
Conference number: 14

Conference

Conference14th ASML Technology Conference 2013
CountryNetherlands
CityEindhoven
Period20/06/1320/06/13

Keywords

  • METIS-299685

Cite this

Makhotkin, I. A., Zoethout, E., Nyabero, S. L., Medvedev, V., van de Kruijs, R. W. E., Louis, E., ... Bijkerk, F. (2013). Multilayer development for the generation beyond EUV: 6.x nm. -. Poster session presented at 14th ASML Technology Conference 2013, Eindhoven, Netherlands.
Makhotkin, Igor Alexandrovich ; Zoethout, E. ; Nyabero, S.L. ; Medvedev, Viacheslav ; van de Kruijs, Robbert Wilhelmus Elisabeth ; Louis, Eric ; Yakunin, A.M. ; Banine, V. ; Muellender, S. ; Bijkerk, Frederik. / Multilayer development for the generation beyond EUV: 6.x nm. Poster session presented at 14th ASML Technology Conference 2013, Eindhoven, Netherlands.
@conference{1971bd4090d04d61a20dd16d1f6a4682,
title = "Multilayer development for the generation beyond EUV: 6.x nm",
abstract = "6.7 nm — one of the possible candidate for next generation lithography optics needed LaN/B one of the most promising material combinations: {\`a} La and B show highest optical contrast for 6.7 nm wavelength {\`a} Nitridation of La increases optical contrast Narrow bandwidth of ML reflectance {\`a} ultimate reflectivity form the stack required",
keywords = "METIS-299685",
author = "Makhotkin, {Igor Alexandrovich} and E. Zoethout and S.L. Nyabero and Viacheslav Medvedev and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and Eric Louis and A.M. Yakunin and V. Banine and S. Muellender and Frederik Bijkerk",
year = "2013",
month = "6",
day = "20",
language = "Undefined",
pages = "--",
note = "null ; Conference date: 20-06-2013 Through 20-06-2013",

}

Makhotkin, IA, Zoethout, E, Nyabero, SL, Medvedev, V, van de Kruijs, RWE, Louis, E, Yakunin, AM, Banine, V, Muellender, S & Bijkerk, F 2013, 'Multilayer development for the generation beyond EUV: 6.x nm' 14th ASML Technology Conference 2013, Eindhoven, Netherlands, 20/06/13 - 20/06/13, pp. -.

Multilayer development for the generation beyond EUV: 6.x nm. / Makhotkin, Igor Alexandrovich; Zoethout, E.; Nyabero, S.L.; Medvedev, Viacheslav; van de Kruijs, Robbert Wilhelmus Elisabeth; Louis, Eric; Yakunin, A.M.; Banine, V.; Muellender, S.; Bijkerk, Frederik.

2013. - Poster session presented at 14th ASML Technology Conference 2013, Eindhoven, Netherlands.

Research output: Contribution to conferencePoster

TY - CONF

T1 - Multilayer development for the generation beyond EUV: 6.x nm

AU - Makhotkin, Igor Alexandrovich

AU - Zoethout, E.

AU - Nyabero, S.L.

AU - Medvedev, Viacheslav

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Louis, Eric

AU - Yakunin, A.M.

AU - Banine, V.

AU - Muellender, S.

AU - Bijkerk, Frederik

PY - 2013/6/20

Y1 - 2013/6/20

N2 - 6.7 nm — one of the possible candidate for next generation lithography optics needed LaN/B one of the most promising material combinations: à La and B show highest optical contrast for 6.7 nm wavelength à Nitridation of La increases optical contrast Narrow bandwidth of ML reflectance à ultimate reflectivity form the stack required

AB - 6.7 nm — one of the possible candidate for next generation lithography optics needed LaN/B one of the most promising material combinations: à La and B show highest optical contrast for 6.7 nm wavelength à Nitridation of La increases optical contrast Narrow bandwidth of ML reflectance à ultimate reflectivity form the stack required

KW - METIS-299685

M3 - Poster

SP - -

ER -

Makhotkin IA, Zoethout E, Nyabero SL, Medvedev V, van de Kruijs RWE, Louis E et al. Multilayer development for the generation beyond EUV: 6.x nm. 2013. Poster session presented at 14th ASML Technology Conference 2013, Eindhoven, Netherlands.