Abstract
Reported are the first calculations and experimental results of the deposition of EUV multilayer coatings that actively suppress the reflectance in the VUV wavelength range. In the undesired 100-200 nm band a factor of five reduction was achieved for one single optical element, while only a minor loss of 4.5% reflectance for λ = 13.5 nm, the operating wavelength of EUVL, was found.
| Original language | English |
|---|---|
| Title of host publication | Emerging Lithographic Technologies X |
| DOIs | |
| Publication status | Published - 10 Jul 2006 |
| Externally published | Yes |
| Event | Emerging Lithographic Technologies X 2006 - San Jose, United States Duration: 21 Jan 2006 → 23 Jan 2006 Conference number: 10 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 6151 II |
| ISSN (Print) | 0277-786X |
Conference
| Conference | Emerging Lithographic Technologies X 2006 |
|---|---|
| Country/Territory | United States |
| City | San Jose |
| Period | 21/01/06 → 23/01/06 |
Keywords
- EUV Lithography
- Mo/Si multilayers
- Out of band radiation
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