Multilevel interconnect reliability on the effects of electro-thermomechanical stresses

Van Hieu Nguyen

    Research output: Thesis › PhD Thesis - Research UT, graduation UT › Academic

    12 Downloads (Pure)

    Abstract

    The study of interconnect reliability has a long history. The technology has advanced by miniaturization, integrating more and more transistors on a single chip. By necessity the interconnect structure has complex architectures, diverse materials and small features. Conventionally, in multilevel interconnects, the conductor lines are embedded in a dielectric matrix and the conductor lines are linked together by vias, fabricated on the silicon die that contains the active devices. Therefore, electromigration, thermomigration and thermomechanical failures are serious reliability concerns for integrated circuits. Multilevel interconnect failures due to very fast thermal cycle stress or the coupling of electromigration with fast temperature cycling or temperature gradients as well as the electromigration failure at vias are topics that are not fully understood. In this thesis, the effect of those failure mechanisms on the interconnect reliability have been investigated
    Original languageEnglish
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Kuper, F.G., Supervisor
    • Mouthaan, A.J., Supervisor
    • Salm, Cora , Co-Supervisor
    Thesis sponsors
    Award date19 Mar 2004
    Place of PublicationEnschede
    Publisher
    Print ISBNs90-365-2029-0
    Publication statusPublished - 2004

    Fingerprint

    Electromigration
    Thermal gradients
    Integrated circuits
    Transistors
    Silicon
    Temperature

    Keywords

    • IR-41418

    Cite this

    Nguyen, Van Hieu. / Multilevel interconnect reliability on the effects of electro-thermomechanical stresses. Enschede : University of Twente, 2004. 135 p.
    @phdthesis{ad2a30783e3943b39a0b66b9cfb1dd68,
    title = "Multilevel interconnect reliability on the effects of electro-thermomechanical stresses",
    abstract = "The study of interconnect reliability has a long history. The technology has advanced by miniaturization, integrating more and more transistors on a single chip. By necessity the interconnect structure has complex architectures, diverse materials and small features. Conventionally, in multilevel interconnects, the conductor lines are embedded in a dielectric matrix and the conductor lines are linked together by vias, fabricated on the silicon die that contains the active devices. Therefore, electromigration, thermomigration and thermomechanical failures are serious reliability concerns for integrated circuits. Multilevel interconnect failures due to very fast thermal cycle stress or the coupling of electromigration with fast temperature cycling or temperature gradients as well as the electromigration failure at vias are topics that are not fully understood. In this thesis, the effect of those failure mechanisms on the interconnect reliability have been investigated",
    keywords = "IR-41418",
    author = "Nguyen, {Van Hieu}",
    year = "2004",
    language = "English",
    isbn = "90-365-2029-0",
    publisher = "University of Twente",
    address = "Netherlands",
    school = "University of Twente",

    }

    Nguyen, VH 2004, 'Multilevel interconnect reliability on the effects of electro-thermomechanical stresses', University of Twente, Enschede.

    Multilevel interconnect reliability on the effects of electro-thermomechanical stresses. / Nguyen, Van Hieu.

    Enschede : University of Twente, 2004. 135 p.

    Research output: Thesis › PhD Thesis - Research UT, graduation UT › Academic

    TY - THES

    T1 - Multilevel interconnect reliability on the effects of electro-thermomechanical stresses

    AU - Nguyen, Van Hieu

    PY - 2004

    Y1 - 2004

    N2 - The study of interconnect reliability has a long history. The technology has advanced by miniaturization, integrating more and more transistors on a single chip. By necessity the interconnect structure has complex architectures, diverse materials and small features. Conventionally, in multilevel interconnects, the conductor lines are embedded in a dielectric matrix and the conductor lines are linked together by vias, fabricated on the silicon die that contains the active devices. Therefore, electromigration, thermomigration and thermomechanical failures are serious reliability concerns for integrated circuits. Multilevel interconnect failures due to very fast thermal cycle stress or the coupling of electromigration with fast temperature cycling or temperature gradients as well as the electromigration failure at vias are topics that are not fully understood. In this thesis, the effect of those failure mechanisms on the interconnect reliability have been investigated

    AB - The study of interconnect reliability has a long history. The technology has advanced by miniaturization, integrating more and more transistors on a single chip. By necessity the interconnect structure has complex architectures, diverse materials and small features. Conventionally, in multilevel interconnects, the conductor lines are embedded in a dielectric matrix and the conductor lines are linked together by vias, fabricated on the silicon die that contains the active devices. Therefore, electromigration, thermomigration and thermomechanical failures are serious reliability concerns for integrated circuits. Multilevel interconnect failures due to very fast thermal cycle stress or the coupling of electromigration with fast temperature cycling or temperature gradients as well as the electromigration failure at vias are topics that are not fully understood. In this thesis, the effect of those failure mechanisms on the interconnect reliability have been investigated

    KW - IR-41418

    M3 - PhD Thesis - Research UT, graduation UT

    SN - 90-365-2029-0

    PB - University of Twente

    CY - Enschede

    ER -

    Nguyen VH. Multilevel interconnect reliability on the effects of electro-thermomechanical stresses. Enschede: University of Twente, 2004. 135 p.

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