Abstract
Original language | English |
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Award date | 19 Mar 2004 |
Place of Publication | Enschede |
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Print ISBNs | 90-365-2029-0 |
Publication status | Published - 2004 |
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Keywords
- IR-41418
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Multilevel interconnect reliability on the effects of electro-thermomechanical stresses. / Nguyen, Van Hieu.
Enschede : University of Twente, 2004. 135 p.Research output: Thesis › PhD Thesis - Research UT, graduation UT › Academic
TY - THES
T1 - Multilevel interconnect reliability on the effects of electro-thermomechanical stresses
AU - Nguyen, Van Hieu
PY - 2004
Y1 - 2004
N2 - The study of interconnect reliability has a long history. The technology has advanced by miniaturization, integrating more and more transistors on a single chip. By necessity the interconnect structure has complex architectures, diverse materials and small features. Conventionally, in multilevel interconnects, the conductor lines are embedded in a dielectric matrix and the conductor lines are linked together by vias, fabricated on the silicon die that contains the active devices. Therefore, electromigration, thermomigration and thermomechanical failures are serious reliability concerns for integrated circuits. Multilevel interconnect failures due to very fast thermal cycle stress or the coupling of electromigration with fast temperature cycling or temperature gradients as well as the electromigration failure at vias are topics that are not fully understood. In this thesis, the effect of those failure mechanisms on the interconnect reliability have been investigated
AB - The study of interconnect reliability has a long history. The technology has advanced by miniaturization, integrating more and more transistors on a single chip. By necessity the interconnect structure has complex architectures, diverse materials and small features. Conventionally, in multilevel interconnects, the conductor lines are embedded in a dielectric matrix and the conductor lines are linked together by vias, fabricated on the silicon die that contains the active devices. Therefore, electromigration, thermomigration and thermomechanical failures are serious reliability concerns for integrated circuits. Multilevel interconnect failures due to very fast thermal cycle stress or the coupling of electromigration with fast temperature cycling or temperature gradients as well as the electromigration failure at vias are topics that are not fully understood. In this thesis, the effect of those failure mechanisms on the interconnect reliability have been investigated
KW - IR-41418
M3 - PhD Thesis - Research UT, graduation UT
SN - 90-365-2029-0
PB - University of Twente
CY - Enschede
ER -