N-channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Engineering

• Silicon 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Annealing 50%
• Strain Level 50%
• Dopants 50%
• Current Drain 50%
• Average Increase 50%
• Drain Junction 50%
• Crystallinity 50%
• Field Effect Transistors 50%
• Metal Gate 50%
• Low-Temperature 50%
• Single Dot 50%
• Tensile Strain 50%
• Processing 50%
• Germanium 50%
• Capping Layer 50%
• Excimer Laser 50%

Physics

• Field Effect Transistor 100%
• Strain 100%
• Silicon 66%
• Growth 33%
• Laser Annealing 33%
• Ion 33%
• Germanium 33%
• Temperature 33%
• Excimer Laser 33%
• Crystallinity 33%
• Metal 33%