N-channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility
- V. Jovanovic*
- , C. Biasotto
- , L.K. Nanver
- , J. Moers
- , D. Grutzmacher
- , J. Gerharz
- , G. Mussler
- , J. Van Der Cingel
- , J. J. Zhang
- , G. Bauer
- , O.G. Schmidt
- , L. Miglio
*Corresponding author for this work
Research output: Contribution to journal › Article › Academic › peer-review
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