Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

J. Haneveld, Johan W. Berenschot, P.A. Maury, Henricus V. Jansen

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    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.
    Original languageUndefined
    Title of host publication16th MicroMechanics Europe Workshop, MME 2005
    Place of PublicationChalmers, UK
    PublisherChalmers University
    Number of pages4
    ISBN (Print)9163175533
    Publication statusPublished - 2005
    Event16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden
    Duration: 4 Sep 20056 Sep 2005
    Conference number: 16

    Publication series

    PublisherChalmers University


    Workshop16th MicroMechanics Europe Workshop, MME 2005
    Abbreviated titleMME


    • METIS-228554
    • Silicon
    • Nanostructures
    • IR-76041
    • Edge lithography
    • pattern duplication
    • TMAH
    • nitride
    • LOCOS
    • EWI-19626

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