Abstract
A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.
Original language | Undefined |
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Title of host publication | 16th MicroMechanics Europe Workshop, MME 2005 |
Place of Publication | Chalmers, UK |
Publisher | Chalmers University |
Pages | 72-75 |
Number of pages | 4 |
ISBN (Print) | 9163175533 |
Publication status | Published - 2005 |
Event | 16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden Duration: 4 Sept 2005 → 6 Sept 2005 Conference number: 16 |
Publication series
Name | |
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Publisher | Chalmers University |
Number | 6 |
Workshop
Workshop | 16th MicroMechanics Europe Workshop, MME 2005 |
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Abbreviated title | MME |
Country/Territory | Sweden |
City | Göteborg |
Period | 4/09/05 → 6/09/05 |
Keywords
- METIS-228554
- Silicon
- Nanostructures
- IR-76041
- Edge lithography
- pattern duplication
- TMAH
- nitride
- LOCOS
- EWI-19626