Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

J. Haneveld, Johan W. Berenschot, P.A. Maury, Henricus V. Jansen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    68 Downloads (Pure)

    Abstract

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.
    Original languageUndefined
    Title of host publication16th MicroMechanics Europe Workshop, MME 2005
    Place of PublicationChalmers, UK
    PublisherChalmers University
    Pages72-75
    Number of pages4
    ISBN (Print)9163175533
    Publication statusPublished - 2005
    Event16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden
    Duration: 4 Sep 20056 Sep 2005
    Conference number: 16

    Publication series

    Name
    PublisherChalmers University
    Number6

    Workshop

    Workshop16th MicroMechanics Europe Workshop, MME 2005
    Abbreviated titleMME
    CountrySweden
    CityGöteborg
    Period4/09/056/09/05

    Keywords

    • METIS-228554
    • Silicon
    • Nanostructures
    • IR-76041
    • Edge lithography
    • pattern duplication
    • TMAH
    • nitride
    • LOCOS
    • EWI-19626

    Cite this