Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

J. Haneveld; Johan W. Berenschot; P.A. Maury; Henricus V. Jansen

Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

J. Haneveld, Johan W. Berenschot, P.A. Maury, Henricus V. Jansen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.

Original language	Undefined
Title of host publication	16th MicroMechanics Europe Workshop, MME 2005
Place of Publication	Chalmers, UK
Publisher	Chalmers University
Pages	72-75
Number of pages	4
ISBN (Print)	9163175533
Publication status	Published - 2005
Event	16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden Duration: 4 Sep 2005 → 6 Sep 2005 Conference number: 16

Publication series

Name
Publisher	Chalmers University
Number	6

Workshop

Workshop	16th MicroMechanics Europe Workshop, MME 2005
Abbreviated title	MME
Country	Sweden
City	Göteborg
Period	4/09/05 → 6/09/05

Keywords

METIS-228554
Silicon
Nanostructures
IR-76041
Edge lithography
pattern duplication
TMAH
nitride
LOCOS
EWI-19626

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Cite this

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title = "Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask",

abstract = "A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.",

keywords = "METIS-228554, Silicon, Nanostructures, IR-76041, Edge lithography, pattern duplication, TMAH, nitride, LOCOS, EWI-19626",

author = "J. Haneveld and Berenschot, {Johan W.} and P.A. Maury and Jansen, {Henricus V.}",

note = "This project is financed by the Dutch technology foundation STW (project 5554), which is financially supported by the Netherlands Organisation for Scientific Research (NWO) and the Dutch Ministry of Economic Affairs; null ; Conference date: 04-09-2005 Through 06-09-2005",

year = "2005",

language = "Undefined",

isbn = "9163175533",

publisher = "Chalmers University",

number = "6",

pages = "72--75",

booktitle = "16th MicroMechanics Europe Workshop, MME 2005",

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Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask. / Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

16th MicroMechanics Europe Workshop, MME 2005. Chalmers, UK : Chalmers University, 2005. p. 72-75.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

AU - Haneveld, J.

AU - Berenschot, Johan W.

AU - Maury, P.A.

AU - Jansen, Henricus V.

N1 - Conference code: 16

PY - 2005

Y1 - 2005

N2 - A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.

AB - A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.

KW - METIS-228554

KW - Silicon

KW - Nanostructures

KW - IR-76041

KW - Edge lithography

KW - pattern duplication

KW - TMAH

KW - nitride

KW - LOCOS

KW - EWI-19626

M3 - Conference contribution

SN - 9163175533

SP - 72

EP - 75

BT - 16th MicroMechanics Europe Workshop, MME 2005

PB - Chalmers University

CY - Chalmers, UK

Y2 - 4 September 2005 through 6 September 2005

ER -