Nanolayer boron-semiconductor interfaces and their device applications

Lis K. Nanver; Lin Qi; Xingyu Liu; Tihomir Knežević

doi:10.1016/j.sse.2021.108041

Nanolayer boron-semiconductor interfaces and their device applications

Lis K. Nanver^*, Lin Qi, Xingyu Liu, Tihomir Knežević

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

93 Downloads (Pure)

Abstract

Nanolayers of pure boron (PureB) deposited on Si form p⁺-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.

Original language	English
Article number	108041
Number of pages	4
Journal	Solid-state electronics
Volume	186
Early online date	2 Jun 2021
DOIs	https://doi.org/10.1016/j.sse.2021.108041
Publication status	Published - Dec 2021

Keywords

Photodiodes
Pure boron
Pure gallium
Silicon
Ultrashallow junctions
UT-Hybrid-D

Access to Document

10.1016/j.sse.2021.108041Licence: CC BY

ArticleFinal published version, 2.23 MBLicence: CC BY

Cite this

@article{f186849f5dd0426a90854afcdd7c5713,

title = "Nanolayer boron-semiconductor interfaces and their device applications",

abstract = "Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.",

keywords = "Photodiodes, Pure boron, Pure gallium, Silicon, Ultrashallow junctions, UT-Hybrid-D",

author = "Nanver, {Lis K.} and Lin Qi and Xingyu Liu and Tihomir Kne{\v z}evi{\'c}",

note = "Publisher Copyright: {\textcopyright} 2021 The Author(s)",

year = "2021",

month = dec,

doi = "10.1016/j.sse.2021.108041",

language = "English",

volume = "186",

journal = "Solid-state electronics",

issn = "0038-1101",

publisher = "Elsevier",

}

TY - JOUR

T1 - Nanolayer boron-semiconductor interfaces and their device applications

AU - Nanver, Lis K.

AU - Qi, Lin

AU - Liu, Xingyu

AU - Knežević, Tihomir

PY - 2021/12

Y1 - 2021/12

N2 - Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.

AB - Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.

KW - Photodiodes

KW - Pure boron

KW - Pure gallium

KW - Silicon

KW - Ultrashallow junctions

KW - UT-Hybrid-D

UR - http://www.scopus.com/inward/record.url?scp=85108608156&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2021.108041

DO - 10.1016/j.sse.2021.108041

M3 - Article

AN - SCOPUS:85108608156

SN - 0038-1101

VL - 186

JO - Solid-state electronics

JF - Solid-state electronics

M1 - 108041

ER -

Nanolayer boron-semiconductor interfaces and their device applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this