Nanolayer boron-semiconductor interfaces and their device applications

Lis K. Nanver*, Lin Qi, Xingyu Liu, Tihomir Knežević

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.

Original languageEnglish
Article number108041
Number of pages4
JournalSolid-state electronics
Volume186
Early online date2 Jun 2021
DOIs
Publication statusPublished - Dec 2021

Keywords

  • Photodiodes
  • Pure boron
  • Pure gallium
  • Silicon
  • Ultrashallow junctions
  • UT-Hybrid-D

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