Nanolayer boron-semiconductor interfaces and their device applications

Lis K. Nanver*, Lin Qi, Xingyu Liu, Tihomir Knežević

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.

    Original languageEnglish
    Article number108041
    Number of pages4
    JournalSolid-state electronics
    Volume186
    Early online date2 Jun 2021
    DOIs
    Publication statusE-pub ahead of print/First online - 2 Jun 2021

    Keywords

    • Photodiodes
    • Pure boron
    • Pure gallium
    • Silicon
    • Ultrashallow junctions

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