Nanolithography on hydrogen terminateed silicon by scanning probe microscopy

Christian Schönenberger*, Niels Kramer

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    10 Citations (Scopus)

    Abstract

    Scanning-probe microscopes (SPM), i.e. the scanning-tunneling and force microscopes, can be used to locally oxidize hydrogen-terminated silicon and hydrogenated amorphous silicon. Because of its reliability and potential for pattern transfer, this lithography process has found great attention and has become a prototype process for SPM nanolithography. The local oxidization can be performed in ambient or ultra-high vacuum (UHV), and it is initiated by strong electric fields, electron impact, or by short-wavelength light. In this article, the progress of this subfield of nanolithography is reviewed. Emphasis will be on the process conducted in humid environments were a fairly solid understanding is emerging. For completeness, important experiments performed in UHV will be discussed briefly. Finally, recent applications of this process technique to the fabrication of electronic devices will be presented.
    Original languageEnglish
    Pages (from-to)203-218
    Number of pages16
    JournalMicroelectronic engineering
    Volume32
    Issue number1-4
    DOIs
    Publication statusPublished - 1996

    Keywords

    • Scanning-probe microscope (SPM)
    • Electron Beam Lithography
    • Electronic device
    • Resist
    • Pattern transfer
    • Mask
    • Nanostructures
    • Nanofabrication
    • Device
    • Etch mask
    • Etching
    • Lithography
    • SFM
    • STM

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