Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

Shivakumar D. Thammaiah; John Lundsgaard Hansen; Lis K. Nanver

doi:10.1109/CSTIC.2019.8755633

Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

Shivakumar D. Thammaiah^*, John Lundsgaard Hansen, Lis K. Nanver

^*Corresponding author for this work

Integrated Devices and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

6 Downloads (Pure)

Abstract

Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2019, CSTIC 2019
Editors	Cor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	9781538674437
DOIs	https://doi.org/10.1109/CSTIC.2019.8755633
Publication status	Published - 1 Mar 2019
Event	10th Annual China Semiconductor Technology International Conference, CSTIC 2019 - Shanghai, China Duration: 18 Mar 2019 → 19 Mar 2019 Conference number: 10

Conference

Conference	10th Annual China Semiconductor Technology International Conference, CSTIC 2019
Abbreviated title	CSTIC 2019
Country/Territory	China
City	Shanghai
Period	18/03/19 → 19/03/19

Keywords

Aluminum
Chemical vapor deposition
Diffusion barrier
Diodes
Gallium nitride
Molecular beam epitaxy
Pure boron

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10.1109/CSTIC.2019.8755633

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Thammaiah, S. D., Hansen, J. L., & Nanver, L. K. (2019). Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes. In C. Claeys, R. Huang, H. Wu, Q. Lin, S. Liang, P. Song, Z. Guo, K. Lai, Y. Zhang, X. Qu, H.-L. Lung, & W. Yu (Eds.), China Semiconductor Technology International Conference 2019, CSTIC 2019 Article 8755633 IEEE. https://doi.org/10.1109/CSTIC.2019.8755633

Thammaiah, Shivakumar D. ; Hansen, John Lundsgaard ; Nanver, Lis K. / Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes. China Semiconductor Technology International Conference 2019, CSTIC 2019. editor / Cor Claeys ; Ru Huang ; Hanming Wu ; Qinghuang Lin ; Steve Liang ; Peilin Song ; Zhen Guo ; Kafai Lai ; Ying Zhang ; Xinping Qu ; Hsiang-Lan Lung ; Wenjian Yu. Piscataway, NJ : IEEE, 2019.

@inproceedings{ae1c14dc3e4c436da0c46f3560a24b52,

title = "Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes",

abstract = "Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.",

keywords = "Aluminum, Chemical vapor deposition, Diffusion barrier, Diodes, Gallium nitride, Molecular beam epitaxy, Pure boron",

author = "Thammaiah, {Shivakumar D.} and Hansen, {John Lundsgaard} and Nanver, {Lis K.}",

year = "2019",

month = mar,

day = "1",

doi = "10.1109/CSTIC.2019.8755633",

language = "English",

editor = "Cor Claeys and Ru Huang and Hanming Wu and Qinghuang Lin and Steve Liang and Peilin Song and Zhen Guo and Kafai Lai and Ying Zhang and Xinping Qu and Hsiang-Lan Lung and Wenjian Yu",

booktitle = "China Semiconductor Technology International Conference 2019, CSTIC 2019",

publisher = "IEEE",

address = "United States",

note = "10th Annual China Semiconductor Technology International Conference, CSTIC 2019, CSTIC 2019 ; Conference date: 18-03-2019 Through 19-03-2019",

}

Thammaiah, SD, Hansen, JL & Nanver, LK 2019, Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes. in C Claeys, R Huang, H Wu, Q Lin, S Liang, P Song, Z Guo, K Lai, Y Zhang, X Qu, H-L Lung & W Yu (eds), China Semiconductor Technology International Conference 2019, CSTIC 2019., 8755633, IEEE, Piscataway, NJ, 10th Annual China Semiconductor Technology International Conference, CSTIC 2019, Shanghai, China, 18/03/19. https://doi.org/10.1109/CSTIC.2019.8755633

Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes. / Thammaiah, Shivakumar D.; Hansen, John Lundsgaard; Nanver, Lis K.
China Semiconductor Technology International Conference 2019, CSTIC 2019. ed. / Cor Claeys; Ru Huang; Hanming Wu; Qinghuang Lin; Steve Liang; Peilin Song; Zhen Guo; Kafai Lai; Ying Zhang; Xinping Qu; Hsiang-Lan Lung; Wenjian Yu. Piscataway, NJ: IEEE, 2019. 8755633.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

AU - Thammaiah, Shivakumar D.

AU - Hansen, John Lundsgaard

AU - Nanver, Lis K.

N1 - Conference code: 10

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

AB - Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

KW - Aluminum

KW - Chemical vapor deposition

KW - Diffusion barrier

KW - Diodes

KW - Gallium nitride

KW - Molecular beam epitaxy

KW - Pure boron

UR - http://www.scopus.com/inward/record.url?scp=85069476064&partnerID=8YFLogxK

U2 - 10.1109/CSTIC.2019.8755633

DO - 10.1109/CSTIC.2019.8755633

M3 - Conference contribution

BT - China Semiconductor Technology International Conference 2019, CSTIC 2019

A2 - Claeys, Cor

A2 - Huang, Ru

A2 - Wu, Hanming

A2 - Lin, Qinghuang

A2 - Liang, Steve

A2 - Song, Peilin

A2 - Guo, Zhen

A2 - Lai, Kafai

A2 - Zhang, Ying

A2 - Qu, Xinping

A2 - Lung, Hsiang-Lan

A2 - Yu, Wenjian

PB - IEEE

CY - Piscataway, NJ

T2 - 10th Annual China Semiconductor Technology International Conference, CSTIC 2019

Y2 - 18 March 2019 through 19 March 2019

ER -

Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

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