Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes

Shivakumar D. Thammaiah*, John Lundsgaard Hansen, Lis K. Nanver

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

    Original languageEnglish
    Title of host publicationChina Semiconductor Technology International Conference 2019, CSTIC 2019
    EditorsCor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    ISBN (Electronic)9781538674437
    DOIs
    Publication statusPublished - 1 Mar 2019
    Event10th Annual China Semiconductor Technology International Conference, CSTIC 2019 - Shanghai, China
    Duration: 18 Mar 201919 Mar 2019
    Conference number: 10

    Conference

    Conference10th Annual China Semiconductor Technology International Conference, CSTIC 2019
    Abbreviated titleCSTIC 2019
    CountryChina
    CityShanghai
    Period18/03/1919/03/19

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    Keywords

    • Aluminum
    • Chemical vapor deposition
    • Diffusion barrier
    • Diodes
    • Gallium nitride
    • Molecular beam epitaxy
    • Pure boron

    Cite this

    Thammaiah, S. D., Hansen, J. L., & Nanver, L. K. (2019). Nanometer-thin pure B layers Grown by MBE as metal diffusion barrier on GaN Diodes. In C. Claeys, R. Huang, H. Wu, Q. Lin, S. Liang, P. Song, Z. Guo, K. Lai, Y. Zhang, X. Qu, H-L. Lung, ... W. Yu (Eds.), China Semiconductor Technology International Conference 2019, CSTIC 2019 [8755633] Piscataway, NJ: IEEE. https://doi.org/10.1109/CSTIC.2019.8755633