Nanoscale carrier injectors for high luminescence Si-based LEDs

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    In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the leakage of minority carriers in the injector regions, availing more carriers for effective radiative recombination in the intrinsic volume of the device. A comparison is made between reference large-scale and nano-size injectorp–i–n diodes.
    Original languageUndefined
    Pages (from-to)43-48
    Number of pages6
    JournalSolid-state electronics
    Issue numberSpecial Issue, Selected Papers from the ESSDERC 2011 Conference
    Publication statusPublished - 27 Apr 2012


    • Antifuse
    • EWI-21873
    • Electroluminescence
    • Silicon LEDs
    • METIS-287875
    • Nanoscale contacts
    • Carriers injector
    • IR-80927

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