Nanoscale carrier injectors for high luminescence Si-based LEDs

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the leakage of minority carriers in the injector regions, availing more carriers for effective radiative recombination in the intrinsic volume of the device. A comparison is made between reference large-scale and nano-size injectorp–i–n diodes.
    Original languageUndefined
    Pages (from-to)43-48
    Number of pages6
    JournalSolid-state electronics
    Volume74
    Issue numberSpecial Issue, Selected Papers from the ESSDERC 2011 Conference
    DOIs
    Publication statusPublished - 27 Apr 2012

    Keywords

    • Antifuse
    • EWI-21873
    • Electroluminescence
    • Silicon LEDs
    • METIS-287875
    • Nanoscale contacts
    • Carriers injector
    • IR-80927

    Cite this

    Piccolo, G. ; Kovalgin, Alexeij Y. ; Schmitz, Jurriaan. / Nanoscale carrier injectors for high luminescence Si-based LEDs. In: Solid-state electronics. 2012 ; Vol. 74, No. Special Issue, Selected Papers from the ESSDERC 2011 Conference. pp. 43-48.
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    title = "Nanoscale carrier injectors for high luminescence Si-based LEDs",
    abstract = "In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the leakage of minority carriers in the injector regions, availing more carriers for effective radiative recombination in the intrinsic volume of the device. A comparison is made between reference large-scale and nano-size injectorp–i–n diodes.",
    keywords = "Antifuse, EWI-21873, Electroluminescence, Silicon LEDs, METIS-287875, Nanoscale contacts, Carriers injector, IR-80927",
    author = "G. Piccolo and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "Special issue: Selected Papers from the ESSDERC 2011 Conference",
    year = "2012",
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    doi = "10.1016/j.sse.2012.04.010",
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    Piccolo, G, Kovalgin, AY & Schmitz, J 2012, 'Nanoscale carrier injectors for high luminescence Si-based LEDs', Solid-state electronics, vol. 74, no. Special Issue, Selected Papers from the ESSDERC 2011 Conference, pp. 43-48. https://doi.org/10.1016/j.sse.2012.04.010

    Nanoscale carrier injectors for high luminescence Si-based LEDs. / Piccolo, G.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

    In: Solid-state electronics, Vol. 74, No. Special Issue, Selected Papers from the ESSDERC 2011 Conference, 27.04.2012, p. 43-48.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Nanoscale carrier injectors for high luminescence Si-based LEDs

    AU - Piccolo, G.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

    N1 - Special issue: Selected Papers from the ESSDERC 2011 Conference

    PY - 2012/4/27

    Y1 - 2012/4/27

    N2 - In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the leakage of minority carriers in the injector regions, availing more carriers for effective radiative recombination in the intrinsic volume of the device. A comparison is made between reference large-scale and nano-size injectorp–i–n diodes.

    AB - In this paper we present the increased light emission for Sip–i–n light emitting diodes (LEDs) by geometrical scaling of the injector size for p- and n- type carriers. Simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the leakage of minority carriers in the injector regions, availing more carriers for effective radiative recombination in the intrinsic volume of the device. A comparison is made between reference large-scale and nano-size injectorp–i–n diodes.

    KW - Antifuse

    KW - EWI-21873

    KW - Electroluminescence

    KW - Silicon LEDs

    KW - METIS-287875

    KW - Nanoscale contacts

    KW - Carriers injector

    KW - IR-80927

    U2 - 10.1016/j.sse.2012.04.010

    DO - 10.1016/j.sse.2012.04.010

    M3 - Article

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    SP - 43

    EP - 48

    JO - Solid-state electronics

    JF - Solid-state electronics

    SN - 0038-1101

    IS - Special Issue, Selected Papers from the ESSDERC 2011 Conference

    ER -

    Piccolo G, Kovalgin AY, Schmitz J. Nanoscale carrier injectors for high luminescence Si-based LEDs. Solid-state electronics. 2012 Apr 27;74(Special Issue, Selected Papers from the ESSDERC 2011 Conference):43-48. https://doi.org/10.1016/j.sse.2012.04.010