Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 46311−46326 |
| Number of pages | 16 |
| Journal | ACS applied materials & interfaces |
| Volume | 11 |
| Issue number | 49 |
| Early online date | 15 Nov 2019 |
| DOIs | |
| Publication status | Published - 11 Dec 2019 |
Fingerprint
Keywords
- UT-Hybrid-D
- sputter deposition
- interfaces
- scaling law
- transition metals
- low energy ion scattering
- intermixing
- thin film growth
- segregation
Cite this
}
Nanoscale Transition Metal Thin Films : Growth Characteristics and Scaling Law for Interlayer Formation. / Chandrasekaran, Anirudhan ; van de Kruijs, Robbert W.E.; Sturm, J.M.; Zameshin, Andrey ; Bijkerk, F.
In: ACS applied materials & interfaces, Vol. 11, No. 49, 11.12.2019, p. 46311−46326.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Nanoscale Transition Metal Thin Films
T2 - Growth Characteristics and Scaling Law for Interlayer Formation
AU - Chandrasekaran, Anirudhan
AU - van de Kruijs, Robbert W.E.
AU - Sturm, J.M.
AU - Zameshin, Andrey
AU - Bijkerk, F.
N1 - ACS deal
PY - 2019/12/11
Y1 - 2019/12/11
N2 - A comprehensive study on the growth of nanoscale transition metal-on-transition metal (TM-on-TM) systems is presented. The near room-temperature intermixing and segregation phenomena during growth are studied in vacuo using high-sensitivity low-energy ion scattering. The investigated TM-on-TM systems are classified into four types according to the observed intermixing and segregation behavior. Empirical rules are suggested to qualitatively predict the growth characteristics of any TM-on-TM system based on the atomic size difference, surface-energy difference, and enthalpy of mixing between the film and substrate atoms. An exponential trend is observed in the effective interface width as a function of the surface-energy difference between the film and substrate layers, with a subtrend based on the crystal structure of the TM layers. A semiempirical model that accurately describes the experimental data is presented. It serves as a scaling law to predict the effective interface width and the minimum film thickness required for full film coverage in TM-on-TM systems in general. The ability to predict the growth characteristics as well as the interface width for any TM-on-TM system significantly contributes to the process of finding the best material combination for a specific application, where layer growth characteristics are implicitly considered when selecting materials based on their functional properties.
AB - A comprehensive study on the growth of nanoscale transition metal-on-transition metal (TM-on-TM) systems is presented. The near room-temperature intermixing and segregation phenomena during growth are studied in vacuo using high-sensitivity low-energy ion scattering. The investigated TM-on-TM systems are classified into four types according to the observed intermixing and segregation behavior. Empirical rules are suggested to qualitatively predict the growth characteristics of any TM-on-TM system based on the atomic size difference, surface-energy difference, and enthalpy of mixing between the film and substrate atoms. An exponential trend is observed in the effective interface width as a function of the surface-energy difference between the film and substrate layers, with a subtrend based on the crystal structure of the TM layers. A semiempirical model that accurately describes the experimental data is presented. It serves as a scaling law to predict the effective interface width and the minimum film thickness required for full film coverage in TM-on-TM systems in general. The ability to predict the growth characteristics as well as the interface width for any TM-on-TM system significantly contributes to the process of finding the best material combination for a specific application, where layer growth characteristics are implicitly considered when selecting materials based on their functional properties.
KW - UT-Hybrid-D
KW - sputter deposition
KW - interfaces
KW - scaling law
KW - transition metals
KW - low energy ion scattering
KW - intermixing
KW - thin film growth
KW - segregation
UR - http://www.scopus.com/inward/record.url?scp=85076447907&partnerID=8YFLogxK
U2 - 10.1021/acsami.9b14414
DO - 10.1021/acsami.9b14414
M3 - Article
VL - 11
SP - 46311−46326
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 49
ER -