We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.
Gao, J. R., Caro, J., Verbruggen, A. H., Radelaar, S., & Middelhoek, J. (1989). Narrow channel Si-MOSFETs for electron transport studies. Microelectronic engineering, 9(1-4), 373-376. https://doi.org/10.1016/0167-9317(89)90082-8