Narrow channel Si-MOSFETs for electron transport studies

J.R. Gao, J. Caro, A.H. Verbruggen, S. Radelaar, J. Middelhoek

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    Abstract

    We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.
    Original languageEnglish
    Pages (from-to)373-376
    JournalMicroelectronic engineering
    Volume9
    Issue number1-4
    DOIs
    Publication statusPublished - 1989

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  • Cite this

    Gao, J. R., Caro, J., Verbruggen, A. H., Radelaar, S., & Middelhoek, J. (1989). Narrow channel Si-MOSFETs for electron transport studies. Microelectronic engineering, 9(1-4), 373-376. https://doi.org/10.1016/0167-9317(89)90082-8