Narrow channel Si-MOSFETs for electron transport studies

J.R. Gao; J. Caro; A.H. Verbruggen; S. Radelaar; J. Middelhoek

doi:10.1016/0167-9317(89)90082-8

Narrow channel Si-MOSFETs for electron transport studies

J.R. Gao, J. Caro, A.H. Verbruggen, S. Radelaar, J. Middelhoek

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Abstract

We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.

Original language	English
Pages (from-to)	373-376
Journal	Microelectronic engineering
Volume	9
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(89)90082-8
Publication status	Published - 1989

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title = "Narrow channel Si-MOSFETs for electron transport studies",

abstract = "We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.",

author = "J.R. Gao and J. Caro and A.H. Verbruggen and S. Radelaar and J. Middelhoek",

year = "1989",

doi = "10.1016/0167-9317(89)90082-8",

language = "English",

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pages = "373--376",

journal = "Microelectronic engineering",

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TY - JOUR

T1 - Narrow channel Si-MOSFETs for electron transport studies

AU - Gao, J.R.

AU - Caro, J.

AU - Verbruggen, A.H.

AU - Radelaar, S.

AU - Middelhoek, J.

PY - 1989

Y1 - 1989

N2 - We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.

AB - We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.

U2 - 10.1016/0167-9317(89)90082-8

DO - 10.1016/0167-9317(89)90082-8

M3 - Article

SN - 0167-9317

VL - 9

SP - 373

EP - 376

JO - Microelectronic engineering

JF - Microelectronic engineering

IS - 1-4

ER -

Narrow channel Si-MOSFETs for electron transport studies

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