Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Koop van Dalfsen, J. Yang, F. Ay, Kerstin Worhoff, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    29 Downloads (Pure)

    Abstract

    Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.
    Original languageUndefined
    Title of host publication15th European Conference on Integrated Optics (ECIO 2010)
    Place of PublicationUK
    PublisherIEEE Photonics Society
    PagesThP34
    Number of pages2
    ISBN (Print)not assigned
    Publication statusPublished - 2010
    Event15th European Conference on Integrated Optics, ECIO 2010 - University of Cambridge, Cambridge, United Kingdom
    Duration: 7 Apr 20109 Apr 2010
    Conference number: 15

    Publication series

    Name
    PublisherIEEE Photonics Society

    Conference

    Conference15th European Conference on Integrated Optics, ECIO 2010
    Abbreviated titleECIO
    CountryUnited Kingdom
    CityCambridge
    Period7/04/109/04/10

    Keywords

    • METIS-277463
    • Aluminum oxide
    • Channel waveguide
    • EWI-19075
    • Energy-transfer upconversion
    • Neodymium
    • Optical Amplifiers
    • IR-75258

    Cite this