Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Koop van Dalfsen, J. Yang, F. Ay, Kerstin Worhoff, Markus Pollnau

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    Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.
    Original languageUndefined
    Title of host publication15th European Conference on Integrated Optics (ECIO 2010)
    Place of PublicationUK
    PublisherIEEE Photonics Society
    Number of pages2
    ISBN (Print)not assigned
    Publication statusPublished - 2010
    Event15th European Conference on Integrated Optics, ECIO 2010 - University of Cambridge, Cambridge, United Kingdom
    Duration: 7 Apr 20109 Apr 2010
    Conference number: 15

    Publication series

    PublisherIEEE Photonics Society


    Conference15th European Conference on Integrated Optics, ECIO 2010
    Abbreviated titleECIO
    Country/TerritoryUnited Kingdom


    • METIS-277463
    • Aluminum oxide
    • Channel waveguide
    • EWI-19075
    • Energy-transfer upconversion
    • Neodymium
    • Optical Amplifiers
    • IR-75258

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