Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Koop van Dalfsen; J. Yang; F. Ay; Kerstin Worhoff; Markus Pollnau

Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Koop van Dalfsen
, J. Yang
, F. Ay
, Kerstin Worhoff
, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.

Original language	Undefined
Title of host publication	15th European Conference on Integrated Optics (ECIO 2010)
Place of Publication	UK
Publisher	IEEE
Pages	ThP34
Number of pages	2
ISBN (Print)	not assigned
Publication status	Published - 2010
Event	15th European Conference on Integrated Optics, ECIO 2010 - University of Cambridge, Cambridge, United Kingdom Duration: 7 Apr 2010 → 9 Apr 2010 Conference number: 15

Publication series

Name
Publisher	IEEE Photonics Society

Conference

Conference	15th European Conference on Integrated Optics, ECIO 2010
Abbreviated title	ECIO
Country/Territory	United Kingdom
City	Cambridge
Period	7/04/10 → 9/04/10

Keywords

METIS-277463
Aluminum oxide
Channel waveguide
EWI-19075
Energy-transfer upconversion
Neodymium
Optical Amplifiers
IR-75258

Access to Document

Cite this

@inproceedings{39034fbf054d40daa6ac87a495d49108,

title = "Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm",

abstract = "Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.",

keywords = "METIS-277463, Aluminum oxide, Channel waveguide, EWI-19075, Energy-transfer upconversion, Neodymium, Optical Amplifiers, IR-75258",

author = "\{van Dalfsen\}, Koop and J. Yang and F. Ay and Kerstin Worhoff and Markus Pollnau",

year = "2010",

language = "Undefined",

isbn = "not assigned",

publisher = "IEEE",

pages = "ThP34",

booktitle = "15th European Conference on Integrated Optics (ECIO 2010)",

address = "United States",

note = "15th European Conference on Integrated Optics, ECIO 2010 ; Conference date: 07-04-2010 Through 09-04-2010",

}

TY - GEN

T1 - Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

AU - van Dalfsen, Koop

AU - Yang, J.

AU - Ay, F.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

N1 - Conference code: 15

PY - 2010

Y1 - 2010

N2 - Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.

AB - Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.

KW - METIS-277463

KW - Aluminum oxide

KW - Channel waveguide

KW - EWI-19075

KW - Energy-transfer upconversion

KW - Neodymium

KW - Optical Amplifiers

KW - IR-75258

M3 - Conference contribution

SN - not assigned

SP - ThP34

BT - 15th European Conference on Integrated Optics (ECIO 2010)

PB - IEEE

CY - UK

T2 - 15th European Conference on Integrated Optics, ECIO 2010

Y2 - 7 April 2010 through 9 April 2010

ER -