Nd-doped polymer waveguide amplifiers at 850-930 nm

J. Yang; Mart Diemeer; G. Sengo; Markus Pollnau; A. Driessen

doi:10.1109/CLEOE-EQEC.2009.5192933

Nd-doped polymer waveguide amplifiers at 850-930 nm

J. Yang
, Mart Diemeer
, G. Sengo
, Markus Pollnau
, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

306 Downloads (Pure)

Abstract

Nd-complex-doped, polymer channel waveguides were realized on thermally oxidized silicon wafers by a simple fabrication procedure. Broadband optical gain was demonstrated at 850-930 nm. Internal net gain up to 5.3 dB/cm was obtained at 850 nm, which is very promising for optical amplification in optical backplanes. With this result a route toward low-cost integrated waveguide amplifiers for optical interconnects has been opened.

Original language	English
Title of host publication	Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Place of Publication	Piscataway
Publisher	IEEE
Pages	CJ7.5 THU
Number of pages	1
ISBN (Print)	978-1-4244-4079-5
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2009.5192933
Publication status	Published - 7 Aug 2009
Event	11th European Quantum Electronics Conference, EQEC 2009 - Munich, Germany Duration: 14 Jun 2009 → 19 Jun 2009 Conference number: 11 http://2009.cleoeurope.org/

Publication series

Name
Publisher	IEEE Computer Society Press

Conference

Conference	11th European Quantum Electronics Conference, EQEC 2009
Abbreviated title	EQEC 2009
Country/Territory	Germany
City	Munich
Period	14/06/09 → 19/06/09
Internet address	http://2009.cleoeurope.org/

Keywords

METIS-265814
IOMS-APD: Active Photonic Devices
EWI-17494
IR-69972

Access to Document

10.1109/CLEOE-EQEC.2009.5192933

Cite this

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title = "Nd-doped polymer waveguide amplifiers at 850-930 nm",

abstract = "Nd-complex-doped, polymer channel waveguides were realized on thermally oxidized silicon wafers by a simple fabrication procedure. Broadband optical gain was demonstrated at 850-930 nm. Internal net gain up to 5.3 dB/cm was obtained at 850 nm, which is very promising for optical amplification in optical backplanes. With this result a route toward low-cost integrated waveguide amplifiers for optical interconnects has been opened.",

keywords = "METIS-265814, IOMS-APD: Active Photonic Devices, EWI-17494, IR-69972",

author = "J. Yang and Mart Diemeer and G. Sengo and Markus Pollnau and A. Driessen",

note = "eemcs-eprint-17494 - CJ7.5 THU ; 11th European Quantum Electronics Conference, EQEC 2009, EQEC 2009 ; Conference date: 14-06-2009 Through 19-06-2009",

year = "2009",

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publisher = "IEEE",

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address = "United States",

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}

Yang, J, Diemeer, M, Sengo, G, Pollnau, M & Driessen, A 2009, Nd-doped polymer waveguide amplifiers at 850-930 nm. in Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on., CJ7.5 THU, IEEE, Piscataway, pp. CJ7.5 THU, 11th European Quantum Electronics Conference, EQEC 2009, Munich, Bavaria, Germany, 14/06/09. https://doi.org/10.1109/CLEOE-EQEC.2009.5192933

Nd-doped polymer waveguide amplifiers at 850-930 nm. / Yang, J.; Diemeer, Mart; Sengo, G. et al.
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. Piscataway: IEEE, 2009. p. CJ7.5 THU CJ7.5 THU.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Nd-doped polymer waveguide amplifiers at 850-930 nm

AU - Yang, J.

AU - Diemeer, Mart

AU - Sengo, G.

AU - Pollnau, Markus

AU - Driessen, A.

N1 - Conference code: 11

PY - 2009/8/7

Y1 - 2009/8/7

N2 - Nd-complex-doped, polymer channel waveguides were realized on thermally oxidized silicon wafers by a simple fabrication procedure. Broadband optical gain was demonstrated at 850-930 nm. Internal net gain up to 5.3 dB/cm was obtained at 850 nm, which is very promising for optical amplification in optical backplanes. With this result a route toward low-cost integrated waveguide amplifiers for optical interconnects has been opened.

AB - Nd-complex-doped, polymer channel waveguides were realized on thermally oxidized silicon wafers by a simple fabrication procedure. Broadband optical gain was demonstrated at 850-930 nm. Internal net gain up to 5.3 dB/cm was obtained at 850 nm, which is very promising for optical amplification in optical backplanes. With this result a route toward low-cost integrated waveguide amplifiers for optical interconnects has been opened.

KW - METIS-265814

KW - IOMS-APD: Active Photonic Devices

KW - EWI-17494

KW - IR-69972

U2 - 10.1109/CLEOE-EQEC.2009.5192933

DO - 10.1109/CLEOE-EQEC.2009.5192933

M3 - Conference contribution

SN - 978-1-4244-4079-5

SP - CJ7.5 THU

BT - Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

PB - IEEE

CY - Piscataway

T2 - 11th European Quantum Electronics Conference, EQEC 2009

Y2 - 14 June 2009 through 19 June 2009

ER -

Nd-doped polymer waveguide amplifiers at 850-930 nm

Abstract

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Conference

Keywords

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Cite this