Nd-doped waveguide amplifiers for heterogeneous integration in optical backplanes

Feridun Ay, Jing Yang, Tobias Lamprecht, Kerstin Wörhoff, Sonia M. García Blanco, Alfred Driessen, Folkert Horst, Bert J. Offrein, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    The optical amplifier performance of Nd3+-doped polymer and amorphous Al2O3 channel waveguides with single-mode and multi-mode behavior around 880 nm is compared. Internal net gain in the wavelength range 865-930 nm is investigated under continuous-wave excitation near 800 nm, for Nd3+ dopant concentrations typically in the range of 0.6- 1.0 × 1020 cm-3. A peak gain of 2.8 dB at 873 nm is obtained in a 1.9-cm-long polymer waveguide at a launched pump power of 25 mW. The small-signal gain measured in a 1-cm-long sample is 2.0 dB/cm. In Al2O3, a peak gain of 1.57 dB/cm in a short and 3.0 dB in a 4.1-cm-long waveguide is obtained at 880 nm. Tapered multi-mode Nd3+-doped amplifiers are embedded into an optical backplane and a maximum 0.21 dB net gain is demonstrated in a structure consisting of an Al2O3:Nd3+ amplifier placed between two passive polymer waveguides on an optical backplane. The gain can be further enhanced by increasing the pump power and improving the waveguide geometry, and the wavelength of amplification can be adjusted by doping other rare-earth ions.
    Original languageEnglish
    Title of host publicationOptoelectronic Integrated Circuits XIII
    Place of PublicationWashington, DC
    PublisherSPIE
    PagesQ1-Q8
    Number of pages8
    ISBN (Print)9780819484796
    DOIs
    Publication statusPublished - 17 Jan 2011
    EventOptoelectronic Integrated Circuits XIII 2011 - San Francisco, United States
    Duration: 22 Jan 201127 Jan 2011
    Conference number: 13

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume7942

    Conference

    ConferenceOptoelectronic Integrated Circuits XIII 2011
    CountryUnited States
    CitySan Francisco
    Period22/01/1127/01/11

    Keywords

    • Channel waveguide amplifiers
    • Rare earth ion doped Al2O3 waveguides
    • Optical interconnects
    • Optical backplanes
    • IOMS-APD: Active Photonic Devices
    • Rare earth ion doped polymer waveguides

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