Negating HIO-induced metal and carbide EUV surface contamination

Jacobus Marinus Sturm; Michael Gleeson; Robbert Wilhelmus Elisabeth van de Kruijs; Christopher James Lee; A.W. Kleyn; Frederik Bijkerk

Negating HIO-induced metal and carbide EUV surface contamination

Jacobus Marinus Sturm, Michael Gleeson, Robbert Wilhelmus Elisabeth van de Kruijs, Christopher James Lee, A.W. Kleyn, Frederik Bijkerk

Laser Physics & Nonlinear Optics

Research output: Other contribution › Other research output

Abstract

The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.

Original language	English
Publication status	Published - 2011

Keywords

METIS-304968

Cite this

@misc{8ff7b6e0f9d1451a81f75737c2dac45c,

title = "Negating HIO-induced metal and carbide EUV surface contamination",

abstract = "The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.",

keywords = "METIS-304968",

author = "Sturm, {Jacobus Marinus} and Michael Gleeson and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and Lee, {Christopher James} and A.W. Kleyn and Frederik Bijkerk",

year = "2011",

language = "English",

type = "Other",

}

TY - GEN

T1 - Negating HIO-induced metal and carbide EUV surface contamination

AU - Sturm, Jacobus Marinus

AU - Gleeson, Michael

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Lee, Christopher James

AU - Kleyn, A.W.

AU - Bijkerk, Frederik

PY - 2011

Y1 - 2011

N2 - The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.

AB - The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.

KW - METIS-304968

M3 - Other contribution

ER -

Negating HIO-induced metal and carbide EUV surface contamination

Abstract

Keywords

Fingerprint

Cite this