Negating HIO-induced metal and carbide EUV surface contamination

Research output: Other contributionOther research output

Abstract

The next generation photolithography will use 13.5 nm Extreme Ultraviolet (EUV) light in order to reduce feature sizes in semiconductor manufactoring. Lens materials for this wavelength do not exist: image projection requires multilayer mirrors that act as an artificial Bragg crystal.
Original languageEnglish
Publication statusPublished - 2011

Keywords

  • METIS-304968

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