Neodymium-doped Al2O3 Channel Waveguide Amplifiers

Koop van Dalfsen, J. Yang, F. Ay, Kerstin Worhoff, Markus Pollnau

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    Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates by reactive co-sputtering and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transition at 1064 nm was experimentally investigated with various Nd3+ concentrations. With approximately 12 mW of launched pump power at 800 nm, a maximum gain of 4.0 dB/cm was demonstrated in a 1-cm-long Al2O3:Nd channel waveguide sample with a Nd3+ concentration of 1.68x1020 cm-3. Investigations of gain on the Nd3+ ground-state transition around 880 nm are under way. This wavelength range is of interest for amplification of signals transmitted through optical backplanes.
    Original languageUndefined
    Title of host publicationProceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter
    EditorsStefano Beri, Philippe Tassin, Gordon Craggs, Xaveer Leijtens, Jan Dankaert
    PublisherVUBPress Brussels University Press
    Number of pages4
    ISBN (Print)978-90-5487-650-2
    Publication statusPublished - 5 Nov 2009
    Event14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium
    Duration: 5 Nov 20096 Nov 2009
    Conference number: 14

    Publication series

    PublisherVUBPress Brussels University Press


    Conference14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009


    • IR-69944
    • METIS-265797
    • Neodymium
    • IOMS-APD: Active Photonic Devices
    • optical gain
    • EWI-17452
    • Aluminum oxide

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