Neodymium-doped Al2O3 Channel Waveguide Amplifiers

Koop van Dalfsen; J. Yang; F. Ay; Kerstin Worhoff; Markus Pollnau

Neodymium-doped Al₂O₃ Channel Waveguide Amplifiers

Koop van Dalfsen
, J. Yang
, F. Ay
, Kerstin Worhoff
, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates by reactive co-sputtering and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transition at 1064 nm was experimentally investigated with various Nd3+ concentrations. With approximately 12 mW of launched pump power at 800 nm, a maximum gain of 4.0 dB/cm was demonstrated in a 1-cm-long Al2O3:Nd channel waveguide sample with a Nd3+ concentration of 1.68x1020 cm-3. Investigations of gain on the Nd3+ ground-state transition around 880 nm are under way. This wavelength range is of interest for amplification of signals transmitted through optical backplanes.

Original language	Undefined
Title of host publication	Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter
Editors	Stefano Beri, Philippe Tassin, Gordon Craggs, Xaveer Leijtens, Jan Dankaert
Publisher	VUBPress Brussels University Press
Pages	149-152
Number of pages	4
ISBN (Print)	978-90-5487-650-2
Publication status	Published - 5 Nov 2009
Event	14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium Duration: 5 Nov 2009 → 6 Nov 2009 Conference number: 14

Publication series

Name
Publisher	VUBPress Brussels University Press

Conference

Conference	14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009
Country/Territory	Belgium
City	Brussels
Period	5/11/09 → 6/11/09

Keywords

IR-69944
METIS-265797
Neodymium
IOMS-APD: Active Photonic Devices
optical gain
EWI-17452
Aluminum oxide

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Cite this

van Dalfsen, K., Yang, J., Ay, F., Worhoff, K., & Pollnau, M. (2009). Neodymium-doped Al₂O₃ Channel Waveguide Amplifiers. In S. Beri, P. Tassin, G. Craggs, X. Leijtens, & J. Dankaert (Eds.), Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 149-152). VUBPress Brussels University Press. http://eprints.eemcs.utwente.nl/secure2/17452/01/IEEE_Benelux_2009_Proceedings_vanDalfsen.pdf

@inproceedings{fcd3854451ae4727a18a20ff6b5ba2b3,

title = "Neodymium-doped Al2O3 Channel Waveguide Amplifiers",

abstract = "Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates by reactive co-sputtering and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transition at 1064 nm was experimentally investigated with various Nd3+ concentrations. With approximately 12 mW of launched pump power at 800 nm, a maximum gain of 4.0 dB/cm was demonstrated in a 1-cm-long Al2O3:Nd channel waveguide sample with a Nd3+ concentration of 1.68x1020 cm-3. Investigations of gain on the Nd3+ ground-state transition around 880 nm are under way. This wavelength range is of interest for amplification of signals transmitted through optical backplanes.",

keywords = "IR-69944, METIS-265797, Neodymium, IOMS-APD: Active Photonic Devices, optical gain, EWI-17452, Aluminum oxide",

author = "\{van Dalfsen\}, Koop and J. Yang and F. Ay and Kerstin Worhoff and Markus Pollnau",

year = "2009",

month = nov,

day = "5",

language = "Undefined",

isbn = "978-90-5487-650-2",

publisher = "VUBPress Brussels University Press",

pages = "149--152",

editor = "Stefano Beri and Philippe Tassin and Gordon Craggs and Xaveer Leijtens and Jan Dankaert",

booktitle = "Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter",

note = "14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 ; Conference date: 05-11-2009 Through 06-11-2009",

}

van Dalfsen, K, Yang, J, Ay, F, Worhoff, K & Pollnau, M 2009, Neodymium-doped Al₂O₃ Channel Waveguide Amplifiers. in S Beri, P Tassin, G Craggs, X Leijtens & J Dankaert (eds), Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter. VUBPress Brussels University Press, pp. 149-152, 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009, Brussels, Belgium, 5/11/09. <http://eprints.eemcs.utwente.nl/secure2/17452/01/IEEE_Benelux_2009_Proceedings_vanDalfsen.pdf>

Neodymium-doped Al₂O₃ Channel Waveguide Amplifiers. / van Dalfsen, Koop; Yang, J.; Ay, F. et al.
Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter. ed. / Stefano Beri; Philippe Tassin; Gordon Craggs; Xaveer Leijtens; Jan Dankaert. VUBPress Brussels University Press, 2009. p. 149-152.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Neodymium-doped Al2O3 Channel Waveguide Amplifiers

AU - van Dalfsen, Koop

AU - Yang, J.

AU - Ay, F.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

N1 - Conference code: 14

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N2 - Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates by reactive co-sputtering and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transition at 1064 nm was experimentally investigated with various Nd3+ concentrations. With approximately 12 mW of launched pump power at 800 nm, a maximum gain of 4.0 dB/cm was demonstrated in a 1-cm-long Al2O3:Nd channel waveguide sample with a Nd3+ concentration of 1.68x1020 cm-3. Investigations of gain on the Nd3+ ground-state transition around 880 nm are under way. This wavelength range is of interest for amplification of signals transmitted through optical backplanes.

AB - Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates by reactive co-sputtering and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transition at 1064 nm was experimentally investigated with various Nd3+ concentrations. With approximately 12 mW of launched pump power at 800 nm, a maximum gain of 4.0 dB/cm was demonstrated in a 1-cm-long Al2O3:Nd channel waveguide sample with a Nd3+ concentration of 1.68x1020 cm-3. Investigations of gain on the Nd3+ ground-state transition around 880 nm are under way. This wavelength range is of interest for amplification of signals transmitted through optical backplanes.

KW - IR-69944

KW - METIS-265797

KW - Neodymium

KW - IOMS-APD: Active Photonic Devices

KW - optical gain

KW - EWI-17452

KW - Aluminum oxide

M3 - Conference contribution

SN - 978-90-5487-650-2

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EP - 152

BT - Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter

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A2 - Leijtens, Xaveer

A2 - Dankaert, Jan

PB - VUBPress Brussels University Press

T2 - 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009

Y2 - 5 November 2009 through 6 November 2009

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