Net Negative Charge in low-temperature SiO2 gate dielectric layers

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    Abstract

    SiO2 gate dielectric layers (4–60 nm) were grown (0.6 nm/min) by plasma-enhanced chemical vapor deposition (PECVD) in strongly diluted silane plasmas at low substrate temperatures. In contrast to the well-accepted positive charge for thermally grown silicon dioxide, the net oxide charge was negative and a function of layer thickness. Our experiments suggested that the negative charge was created due to unavoidable oxidation of the silicon surface by plasma species, and the CVD component added a positive space charge to the deposited oxide. The net charge was negative under process conditions where plasma oxidation played a major role. Such conditions include low deposition rates and the growth of relatively thin layers.
    Original languageUndefined
    Article number10.1016/j.mee.2009.03.124
    Pages (from-to)1707-1710
    Number of pages4
    JournalMicroelectronic engineering
    Volume86
    Issue number7-9
    DOIs
    Publication statusPublished - 23 Apr 2009

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-62800
    • METIS-263822
    • EWI-15303

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