New applications of r.f.-sputtered glass films as protection and bonding layers in silicon micromachining

Johan W. Berenschot; Johannes G.E. Gardeniers; Theodorus S.J. Lammerink; Michael Curt Elwenspoek

doi:10.1016/0924-4247(94)80134-7

New applications of r.f.-sputtered glass films as protection and bonding layers in silicon micromachining

Johan W. Berenschot, Johannes G.E. Gardeniers, Theodorus S.J. Lammerink, Michael Curt Elwenspoek

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Abstract

Different r.f-sputtered borosilicate glass films are characterized. Layers sputtered in 100% Ar and annealed in N2 at 550 °C for 3.5 h are found to be best applicable as protection layers in anisotropic etching of Si in KOH solutions and as bonding layers in silicon micromachining. For in situ inspection of the progress of the silicon-to-silicon anodic bonding process using sputtered glass as intermediate layer, an infrared inspection equipment is built. Also, an alternative evaluation method of the bonding quality is presented. Bonding experiments with sputtered glass layer thicknesses ranging from 20 to 1000 nm show corresponding progress of the bonding process. The yield does not seem to depend on the thickness of the borosilicate layer. Furthermore, new possible applications are demonstrated, in which the sputtered glass layer acts both as an etch stop and bonding layer.

Original language	Undefined
Pages (from-to)	338-343
Number of pages	6
Journal	Sensors and Actuators A: Physical
Volume	41
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(94)80134-7
Publication status	Published - 1 Apr 1994

Keywords

IR-24200
METIS-129000
EWI-14072

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/0924-4247(94)80134-7

Cite this

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title = "New applications of r.f.-sputtered glass films as protection and bonding layers in silicon micromachining",

abstract = "Different r.f-sputtered borosilicate glass films are characterized. Layers sputtered in 100% Ar and annealed in N2 at 550 °C for 3.5 h are found to be best applicable as protection layers in anisotropic etching of Si in KOH solutions and as bonding layers in silicon micromachining. For in situ inspection of the progress of the silicon-to-silicon anodic bonding process using sputtered glass as intermediate layer, an infrared inspection equipment is built. Also, an alternative evaluation method of the bonding quality is presented. Bonding experiments with sputtered glass layer thicknesses ranging from 20 to 1000 nm show corresponding progress of the bonding process. The yield does not seem to depend on the thickness of the borosilicate layer. Furthermore, new possible applications are demonstrated, in which the sputtered glass layer acts both as an etch stop and bonding layer.",

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AU - Berenschot, Johan W.

AU - Gardeniers, Johannes G.E.

AU - Lammerink, Theodorus S.J.

AU - Elwenspoek, Michael Curt

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AB - Different r.f-sputtered borosilicate glass films are characterized. Layers sputtered in 100% Ar and annealed in N2 at 550 °C for 3.5 h are found to be best applicable as protection layers in anisotropic etching of Si in KOH solutions and as bonding layers in silicon micromachining. For in situ inspection of the progress of the silicon-to-silicon anodic bonding process using sputtered glass as intermediate layer, an infrared inspection equipment is built. Also, an alternative evaluation method of the bonding quality is presented. Bonding experiments with sputtered glass layer thicknesses ranging from 20 to 1000 nm show corresponding progress of the bonding process. The yield does not seem to depend on the thickness of the borosilicate layer. Furthermore, new possible applications are demonstrated, in which the sputtered glass layer acts both as an etch stop and bonding layer.

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