New design methodologies in (111)-oriented silicon wafers

R.E. Oosterbroek, J.W. Berenschot, A.J. Nijdam, G. Pandraud, M.C. Elwenspoek, A. van den Berg

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    New methodologies in anisotropic wet-chemical etching of oriented silicon allowing useful process designs combined with smart mask-to crystal-orientation-alignment are presented. The described methods yield smooth, etch-step free surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching at different depths and passivation steps, structures can be etched at different levels in a wafer. Design rules using the <100>-crystal orientation, supplemented with examples demonstrate the high potential of using <100> oriented wafers in microsystem design.
    Original languageEnglish
    Title of host publicationMicromachining and Microfabrication Process Technology V
    Subtitle of host publication20-22 September 1999, Santa Clara, California
    EditorsJames H. Smith, Jean Michel Karam
    Place of PublicationBellingham, WA, USA
    PublisherSPIE
    Pages384-394
    Number of pages11
    ISBN (Print)0-8194-3471-X
    DOIs
    Publication statusPublished - 20 Sep 1999
    EventMicromachining and Microfabrication Process Technology V - Santa Clara, United States
    Duration: 20 Sep 199922 Sep 1999
    Conference number: 5

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume3874
    ISSN (Print)0277-786X

    Conference

    ConferenceMicromachining and Microfabrication Process Technology V
    CountryUnited States
    CitySanta Clara
    Period20/09/9922/09/99

    Keywords

    • EWI-13210
    • IR-15832
    • METIS-112714

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