Abstract
New methodologies in anisotropic wet-chemical etching of oriented silicon allowing useful process designs combined with smart mask-to crystal-orientation-alignment are presented. The described methods yield smooth, etch-step free surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching at different depths and passivation steps, structures can be etched at different levels in a wafer. Design rules using the <100>-crystal orientation, supplemented with examples demonstrate the high potential of using <100> oriented wafers in microsystem design.
| Original language | English |
|---|---|
| Title of host publication | Micromachining and Microfabrication Process Technology V |
| Subtitle of host publication | 20-22 September 1999, Santa Clara, California |
| Editors | James H. Smith, Jean Michel Karam |
| Place of Publication | Bellingham, WA, USA |
| Publisher | SPIE |
| Pages | 384-394 |
| Number of pages | 11 |
| ISBN (Print) | 0-8194-3471-X |
| DOIs | |
| Publication status | Published - 20 Sept 1999 |
| Event | Micromachining and Microfabrication Process Technology V - Santa Clara, United States Duration: 20 Sept 1999 → 22 Sept 1999 Conference number: 5 |
Publication series
| Name | Proceedings of SPIE |
|---|---|
| Publisher | SPIE |
| Volume | 3874 |
| ISSN (Print) | 0277-786X |
Conference
| Conference | Micromachining and Microfabrication Process Technology V |
|---|---|
| Country/Territory | United States |
| City | Santa Clara |
| Period | 20/09/99 → 22/09/99 |
Keywords
- EWI-13210
- IR-15832
- METIS-112714
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