New developments on high Tc planar devices

R.G. Wichern, Dick Veldhuis, G.J. Gerritsma, Horst Rogalla

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationVeldhoven, The Netherlands
    Publication statusPublished - 24 May 1995

    Keywords

    • METIS-131003

    Cite this

    Wichern, R. G., Veldhuis, D., Gerritsma, G. J., & Rogalla, H. (1995, May 24). New developments on high Tc planar devices. Veldhoven, The Netherlands.
    Wichern, R.G. ; Veldhuis, Dick ; Gerritsma, G.J. ; Rogalla, Horst. / New developments on high Tc planar devices. 1995. Veldhoven, The Netherlands.
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    title = "New developments on high Tc planar devices",
    keywords = "METIS-131003",
    author = "R.G. Wichern and Dick Veldhuis and G.J. Gerritsma and Horst Rogalla",
    year = "1995",
    month = "5",
    day = "24",
    language = "Undefined",
    type = "Other",

    }

    Wichern, RG, Veldhuis, D, Gerritsma, GJ & Rogalla, H 1995, New developments on high Tc planar devices. Veldhoven, The Netherlands.

    New developments on high Tc planar devices. / Wichern, R.G.; Veldhuis, Dick; Gerritsma, G.J.; Rogalla, Horst.

    Veldhoven, The Netherlands. 1995, .

    Research output: Other contributionOther research output

    TY - GEN

    T1 - New developments on high Tc planar devices

    AU - Wichern, R.G.

    AU - Veldhuis, Dick

    AU - Gerritsma, G.J.

    AU - Rogalla, Horst

    PY - 1995/5/24

    Y1 - 1995/5/24

    KW - METIS-131003

    M3 - Other contribution

    CY - Veldhoven, The Netherlands

    ER -

    Wichern RG, Veldhuis D, Gerritsma GJ, Rogalla H. New developments on high Tc planar devices. 1995.