NMOS Transistor behaviour under CDM stress conditions and relation to other ESD models

K. Verhaege, J.R.M. Luchies, C. Russ, G. Groeseneken, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the 6th European Symposium Reliability of Electron Devices, Failure Physics and Analysis, ESREF '95
    Place of PublicationBordeaux, Arcachon, France
    Publication statusPublished - 3 Oct 1995


    • METIS-113974

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