NMOS Transistor behaviour under CDM stress conditions and relation to other ESD models

K. Verhaege, J.R.M. Luchies, C. Russ, G. Groeseneken, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the 6th European Symposium Reliability of Electron Devices, Failure Physics and Analysis, ESREF '95
    Place of PublicationBordeaux, Arcachon, France
    Pages117-126
    Publication statusPublished - 3 Oct 1995

    Keywords

    • METIS-113974

    Cite this

    Verhaege, K., Luchies, J. R. M., Russ, C., Groeseneken, G., & Kuper, F. G. (1995). NMOS Transistor behaviour under CDM stress conditions and relation to other ESD models. In Proceedings of the 6th European Symposium Reliability of Electron Devices, Failure Physics and Analysis, ESREF '95 (pp. 117-126). Bordeaux, Arcachon, France.