Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

S. Pud; J. Li; V. Sibiliev; M. Petrychuk; A. Acevedo; A. Offenhausser; S. Vitusevich

doi:10.1109/ICNF.2013.6578984

Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

S. Pud
, J. Li
, V. Sibiliev
, M. Petrychuk
, A. Acevedo
, A. Offenhausser
, S. Vitusevich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs of different lengths were used to investigate the effect of the electrolyte on channel conductivity.

Original language	English
Title of host publication	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	978-1-4799-0671-0
ISBN (Print)	978-1-4799-0668-0
DOIs	https://doi.org/10.1109/ICNF.2013.6578984
Publication status	Published - 2013
Externally published	Yes
Event	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France Duration: 24 Jun 2013 → 28 Jun 2013

Conference

Conference	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Country/Territory	France
City	Montpellier
Period	24/06/13 → 28/06/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Biosensor
Electrolyte
Noise spectroscopy
Open-gate
Silicon nanowires

Access to Document

10.1109/ICNF.2013.6578984

Cite this

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title = "Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate",

abstract = "In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs of different lengths were used to investigate the effect of the electrolyte on channel conductivity.",

keywords = "Biosensor, Electrolyte, Noise spectroscopy, Open-gate, Silicon nanowires",

author = "S. Pud and J. Li and V. Sibiliev and M. Petrychuk and A. Acevedo and A. Offenhausser and S. Vitusevich",

year = "2013",

doi = "10.1109/ICNF.2013.6578984",

language = "English",

isbn = "978-1-4799-0668-0",

booktitle = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013",

publisher = "IEEE",

address = "United States",

note = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 ; Conference date: 24-06-2013 Through 28-06-2013",

}

Pud, S, Li, J, Sibiliev, V, Petrychuk, M, Acevedo, A, Offenhausser, A & Vitusevich, S 2013, Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate. in 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013., 6578984, IEEE, Piscataway, NJ, 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, 24/06/13. https://doi.org/10.1109/ICNF.2013.6578984

TY - GEN

T1 - Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

AU - Pud, S.

AU - Li, J.

AU - Sibiliev, V.

AU - Petrychuk, M.

AU - Acevedo, A.

AU - Offenhausser, A.

AU - Vitusevich, S.

PY - 2013

Y1 - 2013

N2 - In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs of different lengths were used to investigate the effect of the electrolyte on channel conductivity.

AB - In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs of different lengths were used to investigate the effect of the electrolyte on channel conductivity.

KW - Biosensor

KW - Electrolyte

KW - Noise spectroscopy

KW - Open-gate

KW - Silicon nanowires

UR - https://www.scopus.com/pages/publications/84883687171

U2 - 10.1109/ICNF.2013.6578984

DO - 10.1109/ICNF.2013.6578984

M3 - Conference contribution

AN - SCOPUS:84883687171

SN - 978-1-4799-0668-0

BT - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

PB - IEEE

CY - Piscataway, NJ

T2 - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

Y2 - 24 June 2013 through 28 June 2013

ER -

Noise and transport characteristics of silicon nanowire field effect transistors with liquid gate

Abstract

Conference

UN SDGs

Keywords

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