Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation

V.A. Sydoruk; K. Goß; C. Meyer; B.A. Danilchenko; M.V. Petrychuk; J. Li; S. Pud; S. Vitusevich

doi:10.1109/ICNF.2013.6578937

Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation

V.A. Sydoruk, K. Goß, C. Meyer, B.A. Danilchenko, M.V. Petrychuk, J. Li, S. Pud, S. Vitusevich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO₂ and Al₂O ₃. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (10 ⁶ rad). A strong generation-recombination (GR) noise component observed before the treatment is used to identify several charge traps of two dielectric layers by their activation energy. In spite of reduced flicker noise level after gamma irradiation, the GR noise component almost disappears in the spectra after treatment. This indicates the reduction in the number of charge traps. We study the influence of the Schottky barriers at the metal-nanotube interface on the properties of FETs by analyzing the flicker noise component and identified the regime where the contact contribution is negligible and the conductivity is determined by the properties of CNT material.

Original language	English
Title of host publication	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of Publication	Piscataway, NJ
Publisher	IEEE
ISBN (Electronic)	978-1-4799-0671-0
ISBN (Print)	978-1-4799-0668-0
DOIs	https://doi.org/10.1109/ICNF.2013.6578937
Publication status	Published - 2013
Externally published	Yes
Event	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France Duration: 24 Jun 2013 → 28 Jun 2013

Conference

Conference	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Country/Territory	France
City	Montpellier
Period	24/06/13 → 28/06/13

Keywords

Carbon nanotubes
Field effect transistors
Gamma irraditation
Noise spectroscopy
Top and side gates

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10.1109/ICNF.2013.6578937

Cite this

@inproceedings{cc1cb08dd14545b586879784201ee6cd,

title = "Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation",

abstract = "We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO2 and Al2O 3. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (10 6 rad). A strong generation-recombination (GR) noise component observed before the treatment is used to identify several charge traps of two dielectric layers by their activation energy. In spite of reduced flicker noise level after gamma irradiation, the GR noise component almost disappears in the spectra after treatment. This indicates the reduction in the number of charge traps. We study the influence of the Schottky barriers at the metal-nanotube interface on the properties of FETs by analyzing the flicker noise component and identified the regime where the contact contribution is negligible and the conductivity is determined by the properties of CNT material.",

keywords = "Carbon nanotubes, Field effect transistors, Gamma irraditation, Noise spectroscopy, Top and side gates",

author = "V.A. Sydoruk and K. Go{\ss} and C. Meyer and B.A. Danilchenko and M.V. Petrychuk and J. Li and S. Pud and S. Vitusevich",

year = "2013",

doi = "10.1109/ICNF.2013.6578937",

language = "English",

isbn = "978-1-4799-0668-0",

booktitle = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013",

publisher = "IEEE",

note = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 ; Conference date: 24-06-2013 Through 28-06-2013",

}

Sydoruk, VA, Goß, K, Meyer, C, Danilchenko, BA, Petrychuk, MV, Li, J, Pud, S & Vitusevich, S 2013, Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation. in 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013., 6578937, IEEE, Piscataway, NJ, 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, 24/06/13. https://doi.org/10.1109/ICNF.2013.6578937

Noise properties of carbon nanotube FETs with top-and side-gate geometries : Effect of gamma irradiation. / Sydoruk, V.A.; Goß, K.; Meyer, C. et al.

2013 22nd International Conference on Noise and Fluctuations, ICNF 2013. Piscataway, NJ : IEEE, 2013. 6578937.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Noise properties of carbon nanotube FETs with top-and side-gate geometries

T2 - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

AU - Sydoruk, V.A.

AU - Goß, K.

AU - Meyer, C.

AU - Danilchenko, B.A.

AU - Petrychuk, M.V.

AU - Li, J.

AU - Pud, S.

AU - Vitusevich, S.

PY - 2013

Y1 - 2013

N2 - We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO2 and Al2O 3. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (10 6 rad). A strong generation-recombination (GR) noise component observed before the treatment is used to identify several charge traps of two dielectric layers by their activation energy. In spite of reduced flicker noise level after gamma irradiation, the GR noise component almost disappears in the spectra after treatment. This indicates the reduction in the number of charge traps. We study the influence of the Schottky barriers at the metal-nanotube interface on the properties of FETs by analyzing the flicker noise component and identified the regime where the contact contribution is negligible and the conductivity is determined by the properties of CNT material.

AB - We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO2 and Al2O 3. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (10 6 rad). A strong generation-recombination (GR) noise component observed before the treatment is used to identify several charge traps of two dielectric layers by their activation energy. In spite of reduced flicker noise level after gamma irradiation, the GR noise component almost disappears in the spectra after treatment. This indicates the reduction in the number of charge traps. We study the influence of the Schottky barriers at the metal-nanotube interface on the properties of FETs by analyzing the flicker noise component and identified the regime where the contact contribution is negligible and the conductivity is determined by the properties of CNT material.

KW - Carbon nanotubes

KW - Field effect transistors

KW - Gamma irraditation

KW - Noise spectroscopy

KW - Top and side gates

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M3 - Conference contribution

AN - SCOPUS:84883721922

SN - 978-1-4799-0668-0

BT - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

PB - IEEE

CY - Piscataway, NJ

Y2 - 24 June 2013 through 28 June 2013

ER -

Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation

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