Noise properties of carbon nanotube FETs with top-and side-gate geometries: Effect of gamma irradiation

V.A. Sydoruk, K. Goß, C. Meyer, B.A. Danilchenko, M.V. Petrychuk, J. Li, S. Pud, S. Vitusevich

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

We demonstrate field-effect transistors (FETs) fabricated on the basis of individual carbon nanotubes (CNTs) with top- and side-gate configurations using two different dielectric layers, SiO2 and Al2O 3. Transport properties of the FETs are investigated using noise spectroscopy before and after low-dose gamma irradiation treatment (10 6 rad). A strong generation-recombination (GR) noise component observed before the treatment is used to identify several charge traps of two dielectric layers by their activation energy. In spite of reduced flicker noise level after gamma irradiation, the GR noise component almost disappears in the spectra after treatment. This indicates the reduction in the number of charge traps. We study the influence of the Schottky barriers at the metal-nanotube interface on the properties of FETs by analyzing the flicker noise component and identified the regime where the contact contribution is negligible and the conductivity is determined by the properties of CNT material.

Original languageEnglish
Title of host publication2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of PublicationPiscataway, NJ
PublisherIEEE
ISBN (Electronic)978-1-4799-0671-0
ISBN (Print)978-1-4799-0668-0
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France
Duration: 24 Jun 201328 Jun 2013

Conference

Conference2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
CountryFrance
CityMontpellier
Period24/06/1328/06/13

Keywords

  • Carbon nanotubes
  • Field effect transistors
  • Gamma irraditation
  • Noise spectroscopy
  • Top and side gates

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