Noise spectroscopy of traps in silicon nanowire field-effect transistors

S. Pud*, J. Li, M. Petrychuk, S. Feste, A. Offenhausser, S. Mantl, S. Vitusevich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.

Original languageEnglish
Title of host publicationProceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages242-245
Number of pages4
ISBN (Electronic)978-1-4577-0192-4
ISBN (Print)978-1-4577-0189-4, 978-1-4577-0191-7 (CD)
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada
Duration: 12 Jun 201116 Jun 2011

Conference

Conference21st International Conference on Noise and Fluctuations, ICNF 2011
CountryCanada
CityToronto, ON
Period12/06/1116/06/11

Keywords

  • FET
  • Noise
  • Silicon nanowire
  • Trap density

Fingerprint

Dive into the research topics of 'Noise spectroscopy of traps in silicon nanowire field-effect transistors'. Together they form a unique fingerprint.

Cite this