Noise spectroscopy of traps in silicon nanowire field-effect transistors

S. Pud; J. Li; M. Petrychuk; S. Feste; A. Offenhausser; S. Mantl; S. Vitusevich

doi:10.1109/ICNF.2011.5994309

Noise spectroscopy of traps in silicon nanowire field-effect transistors

S. Pud^*, J. Li, M. Petrychuk, S. Feste, A. Offenhausser, S. Mantl, S. Vitusevich

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm². Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.

Original language	English
Title of host publication	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	242-245
Number of pages	4
ISBN (Electronic)	978-1-4577-0192-4
ISBN (Print)	978-1-4577-0189-4, 978-1-4577-0191-7 (CD)
DOIs	https://doi.org/10.1109/ICNF.2011.5994309
Publication status	Published - 2011
Externally published	Yes
Event	21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada Duration: 12 Jun 2011 → 16 Jun 2011

Conference

Conference	21st International Conference on Noise and Fluctuations, ICNF 2011
Country/Territory	Canada
City	Toronto, ON
Period	12/06/11 → 16/06/11

Keywords

FET
Noise
Silicon nanowire
Trap density

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10.1109/ICNF.2011.5994309

Cite this

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title = "Noise spectroscopy of traps in silicon nanowire field-effect transistors",

abstract = "We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.",

keywords = "FET, Noise, Silicon nanowire, Trap density",

author = "S. Pud and J. Li and M. Petrychuk and S. Feste and A. Offenhausser and S. Mantl and S. Vitusevich",

year = "2011",

doi = "10.1109/ICNF.2011.5994309",

language = "English",

isbn = "978-1-4577-0189-4",

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booktitle = "Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011",

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note = "21st International Conference on Noise and Fluctuations, ICNF 2011 ; Conference date: 12-06-2011 Through 16-06-2011",

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Pud, S, Li, J, Petrychuk, M, Feste, S, Offenhausser, A, Mantl, S & Vitusevich, S 2011, Noise spectroscopy of traps in silicon nanowire field-effect transistors. in Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011., 5994309, IEEE, Piscataway, NJ, pp. 242-245, 21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, ON, Canada, 12/06/11. https://doi.org/10.1109/ICNF.2011.5994309

Noise spectroscopy of traps in silicon nanowire field-effect transistors. / Pud, S.; Li, J.; Petrychuk, M. et al.
Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. Piscataway, NJ: IEEE, 2011. p. 242-245 5994309.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Noise spectroscopy of traps in silicon nanowire field-effect transistors

AU - Pud, S.

AU - Li, J.

AU - Petrychuk, M.

AU - Feste, S.

AU - Offenhausser, A.

AU - Mantl, S.

AU - Vitusevich, S.

PY - 2011

Y1 - 2011

N2 - We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.

AB - We investigated noise spectra of strained nanowire field-effect transistors with cross-section of 42×42nm2. Analysis of the flicker noise component behavior enabled us to evaluate the volume trap density at different locations of the nanowire cross-section. The measured value is not higher than that in conventional planar transistors. As the result of the Lorentzian noise component investigation we have estimated that the position of the single active trap in gate oxide dielectric is at a depth of 0.6 nm.

KW - FET

KW - Noise

KW - Silicon nanowire

KW - Trap density

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U2 - 10.1109/ICNF.2011.5994309

DO - 10.1109/ICNF.2011.5994309

M3 - Conference contribution

AN - SCOPUS:80052754588

SN - 978-1-4577-0189-4

SN - 978-1-4577-0191-7 (CD)

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EP - 245

BT - Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

PB - IEEE

CY - Piscataway, NJ

T2 - 21st International Conference on Noise and Fluctuations, ICNF 2011

Y2 - 12 June 2011 through 16 June 2011

ER -

Noise spectroscopy of traps in silicon nanowire field-effect transistors

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Keywords

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