Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

J. Ackaert; Z. Wang; E. De Backer; P. Colson; P. Coppens

doi:10.1016/S0026-2714(01)00158-5

Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

J. Ackaert, Z. Wang, E. De Backer, P. Colson, P. Coppens

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.

Original language	English
Pages (from-to)	1403-1407
Number of pages	5
Journal	Microelectronics reliability
Volume	41
Issue number	9-10
DOIs	https://doi.org/10.1016/S0026-2714(01)00158-5
Publication status	Published - 1 Oct 2001
Event	12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2001 - Bordeaux, France Duration: 1 Oct 2001 → 5 Oct 2001 Conference number: 12

Keywords

IR-67771
METIS-200751
EWI-15613

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10.1016/S0026-2714(01)00158-5

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Ackaert, J., Wang, Z., De Backer, E., Colson, P., & Coppens, P. (2001). Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors. Microelectronics reliability, 41(9-10), 1403-1407. https://doi.org/10.1016/S0026-2714(01)00158-5

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AU - Coppens, P.

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