Abstract
In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.
Original language | English |
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Pages (from-to) | 1403-1407 |
Number of pages | 5 |
Journal | Microelectronics reliability |
Volume | 41 |
Issue number | 9-10 |
DOIs | |
Publication status | Published - 1 Oct 2001 |
Event | 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2001 - Bordeaux, France Duration: 1 Oct 2001 → 5 Oct 2001 Conference number: 12 |
Keywords
- IR-67771
- METIS-200751
- EWI-15613