In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.
|Number of pages||5|
|Publication status||Published - 1 Oct 2001|
|Event||12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2001 - Bordeaux, France|
Duration: 1 Oct 2001 → 5 Oct 2001
Conference number: 12
Ackaert, J., Wang, Z., De Backer, E., Colson, P., & Coppens, P. (2001). Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors. Microelectronics reliability, 41(9-10), 1403-1407. https://doi.org/10.1016/S0026-2714(01)00158-5