Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

J. Ackaert; Z. Wang; E. De Backer; P. Colson; P. Coppens

doi:10.1016/S0026-2714(01)00158-5

Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

J. Ackaert, Z. Wang, E. De Backer, P. Colson, P. Coppens

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.

Original language	English
Pages (from-to)	1403-1407
Number of pages	5
Journal	Microelectronics reliability
Volume	41
Issue number	9-10
DOIs	https://doi.org/10.1016/S0026-2714(01)00158-5
Publication status	Published - 1 Oct 2001
Event	12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2001 - Bordeaux, France Duration: 1 Oct 2001 → 5 Oct 2001 Conference number: 12

Keywords

IR-67771
METIS-200751
EWI-15613

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10.1016/S0026-2714(01)00158-5

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title = "Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors",

abstract = "In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.",

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author = "J. Ackaert and Z. Wang and {De Backer}, E. and P. Colson and P. Coppens",

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T1 - Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

AU - Ackaert, J.

AU - Wang, Z.

AU - De Backer, E.

AU - Colson, P.

AU - Coppens, P.

N1 - Conference code: 12

PY - 2001/10/1

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N2 - In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.

AB - In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.

KW - IR-67771

KW - METIS-200751

KW - EWI-15613

U2 - 10.1016/S0026-2714(01)00158-5

DO - 10.1016/S0026-2714(01)00158-5

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JF - Microelectronics reliability

SN - 0026-2714

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