Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

J. Ackaert, Z. Wang, E. De Backer, P. Colson, P. Coppens

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitator area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure. This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement.In this way further yield losses have been prevented. A modelfor the relation between the surface charging potential and the voltage difference between the capacitator and the grounded structure is presented.
    Original languageEnglish
    Pages (from-to)1403-1407
    Number of pages5
    JournalMicroelectronics reliability
    Volume41
    Issue number9-10
    DOIs
    Publication statusPublished - 1 Oct 2001
    Event12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2001 - Bordeaux, France
    Duration: 1 Oct 20015 Oct 2001
    Conference number: 12

    Keywords

    • IR-67771
    • METIS-200751
    • EWI-15613

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