Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanance programmes information in the cell of a non-volatile one

Marcel J M Pelgrom (Inventor), F.P. Widdershoven (Inventor), Anne J. Annema (Inventor), M. Storms (Inventor)

Research output: Patent

Original languageEnglish
Patent numberUS 6331947
Priority date18/12/01
Publication statusSubmitted - 18 Dec 2001


  • METIS-203853

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