Abstract
The motion of domain walls is a crucial factor in piezoelectric properties and is usually related to the irreversible and hysteretic behaviors. Herein, we report on the investigation of inverse and transverse piezoelectric coefficients of capacitor-based and microcantilever-based Pb(Zr0.52Ti0.48)O3 films with a change in the DC bias and the AC applied voltage. A large inverse piezoelectric strain coefficient of about 350 p.m./V, and a low strain hysteresis of about 7.1%, are achieved in the film capacitors under a low applied voltage of 2 V (20 kV/cm) which can benefit the actuators for motion control in high-precision systems. The field-dependences of the transverse piezoelectric coefficients, obtained from four-point bending and microcantilever displacement, are in good agreement with each other. The results also reveal that the irreversible domain-wall motion is attributed to the nonlinearity in the field-dependent piezoelectric strain and cantilever displacement.
Original language | English |
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Pages (from-to) | 106-110 |
Number of pages | 5 |
Journal | Current Applied Physics |
Volume | 32 |
Early online date | 26 Oct 2021 |
DOIs | |
Publication status | Published - 1 Dec 2021 |
Keywords
- Domain-wall motion
- Nonlinearity
- Piezoelectric coefficient
- Piezoelectric film
- UT-Hybrid-D