Novel low temperature RF plasma annealing using NH3-N2 gas mixture

Kamal Aïte, F.W. Ragay, J. Middelhoek

    Research output: Contribution to journalArticleAcademicpeer-review

    Original languageEnglish
    Pages (from-to)733-734
    Number of pages2
    JournalElectronics letters
    Volume26
    Issue number11
    Publication statusPublished - 1990

    Keywords

    • METIS-112070

    Cite this

    Aïte, K., Ragay, F. W., & Middelhoek, J. (1990). Novel low temperature RF plasma annealing using NH3-N2 gas mixture. Electronics letters, 26(11), 733-734.