Novel RF-MEMS capacitive switching structures

X. Rottenberg; H.V. Jansen; P. Fiorini; W. De Raedt; H.A.C. Tilmans

doi:10.1109/EUMA.2002.339408

Novel RF-MEMS capacitive switching structures

X. Rottenberg, H.V. Jansen, P. Fiorini, W. De Raedt, H.A.C. Tilmans

Research output: Contribution to conference › Paper › peer-review

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Abstract

This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up capacitance ratio all that are not possible with standard characteristics compared to standard RF-MEMS capacitive switches, in the frequency range from 1 to 30 GHz. Down/up capacitance ratios higher than 450 have been measured, an improvement of a factor 34 over standard designs with equal size and using the same materials.

Original language	English
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/EUMA.2002.339408
Publication status	Published - 23 Sept 2002
Event	32nd European Microwave Conference, EuMC 2002 - Milan, Italy Duration: 23 Sept 2002 → 26 Sept 2002 Conference number: 32

Conference

Conference	32nd European Microwave Conference, EuMC 2002
Abbreviated title	EuMC
Country/Territory	Italy
City	Milan
Period	23/09/02 → 26/09/02

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10.1109/EUMA.2002.339408

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Cite this

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abstract = "This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up capacitance ratio all that are not possible with standard characteristics compared to standard RF-MEMS capacitive switches, in the frequency range from 1 to 30 GHz. Down/up capacitance ratios higher than 450 have been measured, an improvement of a factor 34 over standard designs with equal size and using the same materials.",

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AU - Jansen, H.V.

AU - Fiorini, P.

AU - De Raedt, W.

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N2 - This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up capacitance ratio all that are not possible with standard characteristics compared to standard RF-MEMS capacitive switches, in the frequency range from 1 to 30 GHz. Down/up capacitance ratios higher than 450 have been measured, an improvement of a factor 34 over standard designs with equal size and using the same materials.

AB - This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up capacitance ratio all that are not possible with standard characteristics compared to standard RF-MEMS capacitive switches, in the frequency range from 1 to 30 GHz. Down/up capacitance ratios higher than 450 have been measured, an improvement of a factor 34 over standard designs with equal size and using the same materials.

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DO - 10.1109/EUMA.2002.339408

M3 - Paper

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Novel RF-MEMS capacitive switching structures

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